Fairchild FDD10N20LZ N-Channel MOSFET Data Handbook
Summary
The FDD10N20LZ is a high-performance N-Channel MOSFET designed for low-loss and highly efficient switching in demanding power electronics applications, such as active PFC and voltage regulator circuits. This technical manual provides electrical engineers with comprehensive specifications, including critical metrics on ultra-low $R_{DS(on)}$, fast switching times, thermal management parameters, और avalanche ratings needed for reliable circuit design and optimization.
Page 1 Text Content
10N 20L 200V -C an el M
December 2010
Uni FET
FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description
RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS
Low Gate Charge ( Typ.12n C)
technology.
Low Crss ( Typ.11p F) This advance technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and
Fast Switching
withstand high energy pulse in the avalanche and commutation 100% Avalanche Tested mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
Improved dv/dt Capability
Ro HS Compliant
D-PAK FDD- Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDD10N20LZ Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20
-Continuous (TC = 25o C) 7.6
ID Drain Current
-Continuous (TC = 100o C) 4.5
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.6 EAR Repetitive Avalanche Energy (Note 1) 8.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.45 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Typ Max Units
RJC Thermal Resistance, Junction to Case - 2.2
RJA Thermal Resistance, Junction to Ambient -
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD10N20LZ Rev. A
Page Summary Contents For Fairchild FDD10N20LZ N-Channel MOSFET Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 230.03 KB |
| Published | June 02, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum drain to source voltage?
The device has a Drain to Source Voltage breakdown voltage (BV) of 200 V.
What are the operational temperature limits for this MOSFET?
The operating and storage temperature range is listed as -55 to +150 °C.
How can I ensure the parts I buy are genuine?
Purchase directly from Fairchild or an Authorized Fairchild Distributor to guarantee authentic components with full traceability and warranty coverage.
What metrics determine the MOSFET's efficiency?
Key performance indicators include the static drain-to-source on resistance (Rds(on)), which is typically 0.36 Ω at room temperature.