Fairchild FDP75N08 75V N-Channel MOSFET Data Handbook

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June 2006

Uni FET TM

FDP75N08 75V N-Channel MOSFET Features Description 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V These N-Channel enhancement mode power field effect

Low gate charge ( typical 150 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 85 p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

TO-220

FDP Series G

Absolute Maximum Ratings Symbol Parameter FDP75N08 Units VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 47.7

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source Voltage ± 20

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 13.1 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter FDP75N08 Units RθJC Thermal Resistance, Junction-to-Case 0.95 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FDP75N08 Rev. A