Fairchild FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 13mOhm Data Sheet
Summary
This N-Channel UltraFET Trench MOSFET is a high-reliability power switching device designed for demanding automotive applications, including load control, electronic power steering, and advanced DC-DC converters. Optimized for 24V and 48V systems, it meets rigorous AEC Q101 standards. The manual provides comprehensive technical details on its electrical characteristics, thermal performance (including derating guides), and switching parameters, making it essential for engineers developing distributed power architectures and robust electronic control systems.
Page 1 Text Content
May 2002
FDD16AN08A0 N-Channel Ultra FET® Trench MOSFET 75V, 50A, 16mΩ Features Applications r DS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31n C (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V systems
Formerly developmental type 82660
DRAIN (FLANGE)
SOURCE
TO-252AA FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage
VGS Gate to Source Voltage ±20 Drain Current
AContinuous (TC < 79o C, VGS = 10V)
Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation
Derate above 25o C 0.9 W/o C
TJ, TSTG Operating and Storage Temperature -55 to 175
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-252 1.11
RθJA Thermal Resistance Junction to Ambient TO-252 100
RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. A1
Page Summary Contents For Fairchild FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 13mOhm Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 11 |
| File Size | 242.78 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What specific automotive applications can the MOSFET be used for?
It is suited for Automotive Load Control (e.g., Starter/Alternator Systems, Electronic Power Steering, Valve Train Systems).
What are the maximum power dissipation and thermal rating limits?
The device has a maximum power dissipation of 135 W and dissipates heat according to its mounted case temperature and ambient conditions.
How is component longevity or robustness ensured for automotive use?
It is qualified to AEC Q101, indicating it was designed to meet the extreme test conditions of the automotive industry.
What materials or quality standards confirm the device's reliability?
All Fairchild Semiconductor products are manufactured and tested under ISO9000 and QS9000 quality systems certification.