Fairchild FDD5353 N-Channel Power Trench MOSFET Data Sheet

FD 5353 N -C hannel Pow er Trench SFET

March 2008

FDD5353

N-Channel Power Trench® MOSFET 60V, 50A, 12.3mΩ Features General Description Max r DS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench® process that has

Max r DS(on) = 15.4mΩ at VGS = 4.5V, ID = 9.5A

been especially tailored to minimize the on-state resistance and 100% UIL Tested yet maintain superior switching performance.

Ro HS Compliant Application

Inverter

Synchronous rectifier

Primary switch

TO -252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25°C 50 -Continuous (Silicon limited) TC = 25°C

-Continuous TA = 25°C (Note 1a) 11.5

-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25°C

Power Dissipation TA = 25°C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 1.8

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD5353 FDD5353 D-PAK (TO-252) 13’’ 12mm 2500 units

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