Fairchild FDD2572 FDU2572 N-Channel UltraFET® Trench MOSFET 150V, 29A, 54mOhm Data Sheet
Summary
This datasheet details the FDD2572/FDU2572 N-Channel PowerTrench MOSFET, a robust high-voltage switch built for demanding automotive applications. The manual provides comprehensive technical specifications, including electrical characteristics, thermal performance curves, and detailed switching parameters. It is essential reading for engineers designing reliable power conversion solutions, such as DC/DC converters, Off-Line UPS systems, and advanced 24V/48V vehicle load control units.
Page 1 Text Content
September 2002
FDD2572 / FDU2572 N-Channel Power Trench® MOSFET 150V, 29A, 54mΩ Features Applications r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26n C (Typ.), VGS = 10V
Distributed Power Architectures and VRMs
Low Miller Charge
Primary Switch for 24V and 48V Systems
Low QRR Body Diode
High Voltage Synchronous Rectifier
UIS Capability (Single Pulse and Repetitive Pulse)
Direct Injection / Diesel Injection Systems
Qualified to AEC Q101
Formerly developmental type 82860 42V Automotive Load Control
Electronic Valve Train Systems
DRAIN
SOURCE
(FLANGE)
DRAIN
DRAIN GATE GATE (FLANGE)
SOURCE
TO-252AA
TO-251AA
FDD SERIES
FDU SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage
VGS Gate to Source Voltage ±20 Drain Current
AContinuous (TC = 25o C, VGS = 10V)
ID Continuous (TC = 100o C, VGS = 10V)
Continuous (Tamb = 25o C, VGS = 10V, RθJA = 52o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation
Derate above 25o C 0.9 W/o C
TJ, TSTG Operating and Storage Temperature -55 to 175
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-251, TO-252 1.11
RθJA Thermal Resistance Junction to Ambient TO-251, TO-252
RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2002 Fairchild Semiconductor Corporation FDD2572 / FDU2572 Rev. B
Page Summary Contents For Fairchild FDD2572 FDU2572 N-Channel UltraFET® Trench MOSFET 150V, 29A, 54mOhm Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 11 |
| File Size | 247.75 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What is the maximum Drain to Source Voltage ($ ext{V}_{ ext{DSS}}$) rating?
The specified breakdown voltage ($ ext{V}_{ ext{DSS}}$) is 150 V.
Does this MOSFET meet automotive industry standards?
Yes, it is qualified to AEC Q101 and designed for extreme test conditions demanded by the automotive sector.
How do I determine if higher ambient temperatures limit current?
Power dissipation must be derated above 25°C, following equations shown in Figures 3 and 4, such as $ ext{I} = ext{I}_{25} ( ext{T}/ ext{T}_{ ext{max}})$.
What types of applications are suitable for this MOSFET?
It can be used in DC/DC converters, Offline UPS, Distributed Power Architectures, and various automotive systems like Diesel or Electronic Valve Train Systems.