FAIRCHILD FDP120AN15A0, FDD120AN15A0 N-Channel PowerTrench MOSFET, 150V, 14A, 120mOhm Data Sheet

September 2002

FDP120AN15A0 / FDD120AN15A0 N-Channel Power Trench® MOSFET 150V, 14A, 120mΩ Features Applications r DS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2n C (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems

Electronic Valve Train Systems

Formerly developmental type 82845

DRAIN (FLANGE)

DRAIN

SOURCE(FLANGE) GATE DRAIN

GATE SOURCE

TO-252AA

TO-220AB

FDD SERIES

FDP SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units

VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V) 9.7

Continuous (Tamb = 25o C, VGS = 10V) with RθJA = 52o C/W 2.8 Pulsed Figure 4

EAS Single Pulse Avalanche Energy (Note 1) m J

Power dissipation

Derate above 25o C 0.43 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-252, TO-220 2.31

RθJA Thermal Resistance Junction to Ambient TO-252

RθJA Thermal Resistance Junction to Ambient TO-220 (Note 2)

RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

FDP120AN15A0 / FDD120AN15A0 Rev. C02002 Fairchild Semiconductor Corporation