Fairchild FDP120AN15A0 FDD120AN15A0 Data Manual

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September 2002

FDP120AN15A0 / FDD120AN15A0 N-Channel Power Trench® MOSFET 150V, 14A, 120mΩ Features Applications r DS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2n C (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems Qualified to AEC Q101 42V Automotive Load Control

Electronic Valve Train Systems

Formerly developmental type 82845

DRAIN (FLANGE)

DRAIN

SOURCE(FLANGE) GATE DRAIN

GATE SOURCE

TO-252AA

TO-220AB

FDD SERIES

FDP SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V) 9.7

Continuous (Tamb = 25o C, VGS = 10V) with RθJA = 52o C/W 2.8 Pulsed Figure 4

EAS Single Pulse Avalanche Energy (Note 1) m J

Power dissipation

Derate above 25o C 0.43 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-252, TO-220 2.31

RθJA Thermal Resistance Junction to Ambient TO-252

RθJA Thermal Resistance Junction to Ambient TO-220 (Note 2)

RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

©2002 Fairchild Semiconductor Corporation FDP120AN15A0 / FDD120AN15A0 Rev. B