Fairchild FDD5N60NZ N-Channel MOSFET Data Handbook
Summary
The FDD5N60NZ is a high-performance N-Channel MOSFET engineered for efficient, robust power management up to 600V and 4A. Utilizing advanced planar stripe technology, this device ensures superior switching performance, minimal on-state resistance, and fast operation in demanding circuits such as active PFC and sophisticated power supplies. The comprehensive manual provides detailed technical specifications, including maximum ratings, thermal properties, and dynamic electrical characteristics, making it an essential resource for engineers designing high-efficiency electronic systems.
Page 1 Text Content
5N 60N -C an el M
December 2010
Uni FET-II
FDD5N60NZ N-Channel MOSFET 600V, 4.0A, 2 Features Description
RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS
Low Gate Charge ( Typ. 10n C)
technology. Low Crss ( Typ. 5p F) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and
Fast Switching
withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching
100% Avalanche Tested
mode power supplies and active power factor correction.
Improved dv/dt Capability
ESD Improved Capability
Ro HS Compliant
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDD5N60NZ Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±25
-Continuous (TC = 25o C) 4.0
ID Drain Current
-Continuous (TC = 100o C) 2.4
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 4.0 EAR Repetitive Avalanche Energy (Note 1) 8.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.7 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter FDD5N60NZ Units
RJC Thermal Resistance, Junction to Case 1.5
RJA Thermal Resistance, Junction to Ambient 90
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD5N60NZ Rev. A
Page Summary Contents For Fairchild FDD5N60NZ N-Channel MOSFET Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 235.46 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the device's static on-resistance?
The typical static drain to source resistance (Rds(on)) is 1.65 ohms when tested at V = 10V and I = 2.0A.
What is the maximum continuous operating temperature range?
The Operating Temperature Range is -55 to +150 degrees C.
Why are the features optimized for switching applications?
They use UniFET-II technology, offering superior switching performance and improved dv/dt capability for high efficiency.
What is its maximum continuous drain current rating at 25°C?
The device has a maximum continuous drain current (Id) of 4.0 Amperes at 25°C.