Fairchild FQPF9N08L 80V Logic N-Channel MOSFET Specifications (1)(1)
Summary
The FQPF9N08L is a high-performance 80V N-Channel MOSFET designed for efficient power switching in low voltage, demanding applications. Featuring superior characteristics like low on-state resistance ($R_{DS(on)}$), fast switching speed, and robust handling of high energy pulses up to 175°C, it excels in DC/DC converters, automotive systems, and motor control circuits. This manual provides comprehensive electrical specifications, absolute maximum ratings, thermal analysis, and detailed dynamic switching parameters necessary for professional integration design.
Page 1 Text Content
December 2000
QFETTM
FQPF9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 4.7 n C) planar stripe, DMOS technology. Low Crss ( typical 16 p F) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the
Improved dv/dt capability
avalanche and commutation modes. These devices are
175°C maximum junction temperature rating
well suited for low voltage applications such as automotive,
Low level gate drive requirements allowing
high efficiency switching for DC/DC converters, and DC
direct operation from logic drives
motor control.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF9N08L Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.0
- Continuous (TC = 100°C) 4.95
IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 20 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.0 EAR Repetitive Avalanche Energy (Note 1) 2.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.15 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8” from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 6.52 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A2, December 2000
Page Summary Contents For Fairchild FQPF9N08L 80V Logic N-Channel MOSFET Specifications (1)(1)
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 567.71 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the operational temperature limits for this MOSFET?
The operating and storage temperature range is between -55 and +175 °C.
How should I calculate power dissipation above 25°C?
Power Dissipation must be derated using a rate of 0.15 W/°C when the device operates above 25°C.
What is the typical On-Resistance (Rds(on)) at V = 10V?
The nominal on-resistance value, Rds(on), is typically 0.21Ω.
In what applications are these N-Channel transistors best suited?
They are well suited for low voltage applications such as automotive use, DC/DC converters, and motor control.