FAIRCHILD FDN361AN N-Channel Logic Level PowerTrench User's Manual (1)

April 1999

FDN361AN N-Channel, Logic Level, Power TrenchΤΜ

General Description Features

This N-Channel Logic Level MOSFET is produced using • 1.8 A, 30 V. R = 0.100 Ω @ V = 10 V

DS(on) GS

Fairchild Semiconductor's Power Trench process that has

= 0.150 Ω @ V = 4.5 V. been especially tailored to minimize the on-state resistance DS(on) GS

and yet maintain low gate charge for superior switching

Low gate charge ( 2.1n C typical ).

performance.

Fast switching speed.

High performance trench technology for extremely

Applications

low R DS(on)

• DC/DC converter

High power version of industry standard SOT-23

• Load switch

package. Identical pin out to SOT-23 with

• Motor drives

30% higher power handling capability.

Super SOT -3TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter FDN361AN Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ±20 ID Drain Current - Continuous (Note 1a) 1.8

- Pulsed

PD Power Dissipation for Single Operation (Note 1a) 0.5

(Note 1b) 0.46 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

FDN361AN 7’’ 8mm 3000 units

1998 Fairchild Semiconductor Corporation FDN361AN, Rev. C