Fairchild FQP2N60C FQPF2N60C 600V N-Channel MOSFET User Manual
Summary
Optimize your power designs with this advanced N-Channel MOSFET. Engineered for superior switching speed and high efficiency up to 600V, these devices are ideal for applications requiring robust performance, including active PFC circuits, switched mode power supplies, and electronic lamp ballasts. This comprehensive technical manual provides all necessary information—including absolute maximum ratings, detailed electrical characteristics, and thermal usage guidelines—for engineers designing reliable, high-performance power electronics systems.
Page 1 Text Content
FQ P2N 60C /FQ PF2N 60C
FQP2N60C/FQPF2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 8.5 n C) planar stripe, DMOS technology. Low Crss ( typical 4.3 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP2N60C FQPF2N60C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 2.0 2.0 *
- Continuous (TC = 100°C) 1.35 1.35 *
IDM Drain Current - Pulsed (Note 1) 8 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 2.0 EAR Repetitive Avalanche Energy (Note 1) 5.4 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.43 0.18 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP2N60C FQPF2N60C Units RθJC Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
Page Summary Contents For Fairchild FQP2N60C FQPF2N60C 600V N-Channel MOSFET User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 844.96 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What are typical applications for the FQP2N60C MOSFETs?
They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts.
What is the maximum drain current rating at 25°C?
The continuous drain current (I_D) is rated at 2.0 A for both FQP2N60C and FQPF2N60C.
How is the device's drain current capacity limited?
Drain current is limited by the maximum junction temperature, not solely by external components.
What are the recommended operating temperatures?
The device supports an operating and storage temperature range from -55 to +150 °C.