FAIRCHILD FQP12N60C FQPF12N60C 600V N-Channel MOSFET Data Manual

FQ P12N 60C /FQ PF12N 60C

FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 48 n C) planar stripe, DMOS technology. Low Crss ( typical 21 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-220 TO-220F

SD SD

FQP Series G FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP12N60C FQPF12N60C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 12 *

- Continuous (TC = 100°C) 7.4 7.4 *

IDM Drain Current - Pulsed (Note 1) 48 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 22.5 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.78 0.41 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics Symbol Parameter FQP12N60C FQPF12N60C Units RθJC Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2003 Fairchild Semiconductor Corporation Rev. B, October 2003