Fairchild FQPF8N60CF 600V N-Channel MOSFET User Manual
Summary
This datasheet details the FQPF8N60CF, a high-efficiency 600V N-Channel MOSFET designed for advanced power applications. The manual provides comprehensive technical specifications, including detailed electrical characteristics, thermal ratings, and robust performance guidelines. It is ideal for engineers designing high-frequency switched mode power supplies, active power factor correction (APFC) circuits, and electronic ballasts requiring fast switching, low gate charge, and superior reliability.
Page 1 Text Content
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好! FQ PF8N 60C F 600V N -C hannel M SFET
February 2006
FRFET
FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 28 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 12 p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-220F
FQPF Series
Absolute Maximum Ratings Symbol Parameter FQPF8N60CFT Units VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C) 6.26*
- Continuous (TC = 100°C) 3.96*
IDM Drain Current - Pulsed (Note 1) 25*
VGSS Gate-Source Voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1) 6.26
EAR Repetitive Avalanche Energy (Note 1) 14.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FQPF8N60CF Units RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FQPF8N60CF Rev. A
Page Summary Contents For Fairchild FQPF8N60CF 600V N-Channel MOSFET User Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 763.63 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain-source voltage rating?
The Drain-Source Breakdown Voltage (V DSS) is 600 V.
What temperature range can this MOSFET operate within?
The operating and storage temperature range is -55 to +150 °C.
For what types of power systems is this component recommended?
It is suitable for high-efficient switched mode power supplies, active power factor correction, or electronic lamp ballast.
What are the thermal resistance ratings?
The Junction-to-Case (θJC) is 2.6 °C/W, and Junction-to-Ambient (θJA) is 62.5 °C/W.