FAIRCHILD FQP8N60C FQPF8N60C Data Sheet
Summary
This datasheet details the FQP8N60C/FQPF8N60C N-Channel MOSFET, a high-performance, low gate charge planar stripe technology rated for 600V applications. It is engineered for superior switching speed, low on-state resistance, and robust performance in power electronics. The manual provides complete technical specifications, including absolute maximum ratings, detailed electrical characteristics, thermal profiles, and switching timing data. This component is ideal for professional engineers designing high-efficiency switched mode power supplies, active PFC circuits, and advanced electronic lamp ballasts.
Page 1 Text Content
FQ P8N 60C /FQ PF8N 60C
QFET®
FQP8N60C/FQPF8N60C 600V N-Channel MOSFET
General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 n C) planar stripe, DMOS technology. Low Crss ( typical 12 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP8N60C FQPF8N60C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.5 7.5 *
- Continuous (TC = 100°C) 4.6 4.6 *
IDM Drain Current - Pulsed (Note 1) 30 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.5 EAR Repetitive Avalanche Energy (Note 1) 14.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 1.18 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP8N60C FQPF8N60C Units RθJC Thermal Resistance, Junction-to-Case 0.85 2.6 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2004 Fairchild Semiconductor Corporation Rev. B, March 2004
Page Summary Contents For FAIRCHILD FQP8N60C FQPF8N60C Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 941.93 KB |
| Published | May 19, 2026 |
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Frequently Asked Questions
What are the recommended applications for this MOSFET?
They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
How do I calculate thermal resistance for this device?
R_th_j-a is listed as 62.5 °C/W for the FQP8N60C and FQPF8N60C, providing junction-to-ambient thermal resistance.
What is the continuous drain current capacity at different temperatures?
At room temperature (T=25°C), the maximum drain current (IC) is 7.5 A; at 100°C, it decreases to 4.6 A.
Can this MOSFET withstand high energy pulses?
Yes, it features a 100% avalanche tested performance and can withstand high energy pulse in both avalanche and commutation modes.