Fairchild FQT4N20 200V N-Channel MOSFET Datasheet

FQ T4N 20QFET

May 2001

FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.0 n C) planar stripe, DMOS technology. Low Crss ( typical 5.0 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

SOT-223 FQT Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQT4N20 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 0.85

- Continuous (TC = 70°C) 0.68

IDM Drain Current - Pulsed (Note 1) 3.4 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 0.85 EAR Repetitive Avalanche Energy (Note 1) 0.22 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PD Power Dissipation (TC = 25°C) 2.2

- Derate above 25°C 0.018 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJA Thermal Resistance, Junction-to-Ambient * °C/W * When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation