Fairchild FQA9N90C_ F109 900V N-Channel MOSFET Specification Sheet
Summary
This datasheet documents the Fairchild FQA9N90C_F109 900V N-Channel MOSFET built with QFET planar stripe DMOS technology in a TO-3PN package. The device delivers 9A continuous drain current at 25°C (5.7A at 100°C) with an RDS(on) of 1.4Ω maximum at 10V gate drive. Key dynamic characteristics include a low total gate charge of 45nC typical and reverse transfer capacitance of 14pF, enabling fast switching performance. The MOSFET is 100% avalanche tested with single-pulse avalanche energy rating of
Page 1 Text Content
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好! FQ 9N 90C _F109 900V N -C hannel M SFET
July 2007
FQA9N90C_F109 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 45 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 14p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche Ro HS compliant and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-3PN SD FQA Series
Absolute Maximum Ratings Symbol Parameter FQA9N90C_F109 Units VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C) 9.0
- Continuous (TC = 100°C) 5.7
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source Voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1) 9.0
EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 2.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 0.45 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FQA9N90C_F109 Rev. A
Page Summary Contents For Fairchild FQA9N90C_ F109 900V N-Channel MOSFET Specification Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 818.64 KB |
| Published | July 06, 2026 |
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