Fairchild FDG330P P-Channel 1.8V Specified PowerTrench MOSFET Technical Data Sheet

FD 330P December 2001

FDG330P P-Channel 1.8V Specified Power Trench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses

• –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V

Fairchild’s advanced low voltage Power Trench process.

RDS(ON) = 150 mΩ @ VGS = –2.5 V

It has been optimized for battery power management

applications. RDS(ON) = 215 mΩ @ VGS = –1.8 V

Applications • Low gate charge

• High performance trench technology for extremely

• Battery management

low RDS(ON)

• Load switch

• Compact industry standard SC70-6 surface mount package

Pin 1

SC70-6

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1a) –2 A – Pulsed –6

Power Dissipation for Single Operation (Note 1a) 0.75 W PD (Note 1b) 0.48

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1b) 260 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .30 FDG330P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDG330P Rev D (W)