Fairchild FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET Data Manual

FD 6316P December 2001

FDG6316P P-Channel 1.8V Specified Power Trench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses

• –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V

Fairchild’s advanced low voltage Power Trench process.

RDS(ON) = 360 mΩ @ VGS = –2.5 V

It has been optimized for battery power management

applications. RDS(ON) = 650 mΩ @ VGS = –1.8 V

Applications • Low gate charge

• High performance trench technology for extremely

• Battery management

low RDS(ON)

• Load switch

• Compact industry standard SC70-6 surface mount package

1 or 4 6 or 3

2 or 5 5 or 2

Pin 1 3 or 6 4 or 1

SC70-6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1) –0.7 A – Pulsed –1.8 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .16 FDG6316P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDG6316P Rev D W)