Fairchild FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET datasheet
Summary
This datasheet provides detailed technical specifications for the FDG6308P MOSFET, a P-Channel 1.8V device optimized for high-efficiency battery power management. Designed for demanding load switch and power application circuits, this compact SC70-6 component features low on-resistance (R_DS(on)) using advanced trench technology. Engineers will find comprehensive data covering electrical characteristics, switching performance, dynamic behavior, and temperature stability, enabling accurate circuit design and boosting system reliability in battery-operated devices.
Page 1 Text Content
FD 6308P
October 2000 PRELIMINARY
FDG6308P P-Channel 1.8V Specified Power Trench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses
• –0.6 A, –20 V. RDS(ON) = 0.40 Ω @ VGS = –4.5 V
Fairchild’s advanced low voltage Power Trench process.
RDS(ON) = 0.55 Ω @ VGS = –2.5 V
It has been optimized for battery power management
applications. RDS(ON) = 0.80 Ω @ VGS = –1.8 V
Applications • Low gate charge
• High performance trench technology for extremely
• Battery management
low RDS(ON)
• Load switch
• Compact industry standard SC70-6 surface mount package
1 or 4 6 or 3
2 or 5 5 or 2
Pin 1 3 or 6 4 or 1
SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 VGSS Gate-Source Voltage ± 8 ID Drain Current – Continuous (Note 1) –0.6
– Pulsed –1.8
PD Power Dissipation for Single Operation (Note 1) 0.3 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
.08 FDG6308P 7’’ 8mm 3000 units
2000 Fairchild Semiconductor Corporation FDG6308P Rev B(W)
Page Summary Contents For Fairchild FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET datasheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 86.00 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What type of applications has this MOSFET been optimized for?
It is specifically optimized for battery power management applications and load switch circuitry.
Are there specific considerations regarding pin layout or mounting orientation?
The pinouts are symmetrical, which means Pin 1 and Pin 4 are interchangeable during use.
What is the maximum allowable drain-source on-resistance ($R_{DS(ON)}$) at a high voltage?
At V = –4.5V, the expected median $R_{DS(ON)}$ is 0.40 Ω.
Can this component be used as a critical part in life support systems?
No, it is not authorized for use in life support devices or systems without explicit written approval from Fairchild Semiconductor Corporation.