Fairchild FCH22N60N Technical Specifications Sheet
Summary
The FCH22N60N SuperMOS N-Channel MOSFET is a high-efficiency power component featuring a 600V rating and 22A drain current, optimized for low $\text{R}_{\text{DS(on)}}$ performance using advanced deep trench technology. This manual provides comprehensive technical data covering all electrical characteristics, detailed thermal parameters, and switching behavior across an extreme operating range ($\text{-55}$ to $+150^\circ \text{C}$). It is the ideal choice for robust AC-DC SMPS, PFC, server/telecom power supplies, and demanding industrial applications requiring superior power conversion reliability.
Page 1 Text Content
FC 22N 60N -C hannel M SFET
June 2010
Supre MOS TM
FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The Supre MOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
BVDSS>650V @ TJ = 150o C
process that differentiates it from preceding multi-epi based tech- Ultra Low Gate Charge ( Typ. Qg = 45n C) nologies. By utilizing this advanced technology and precise pro- cess control, Supre MOS provides world class Rsp, superior
Low Effective Output Capacitance switching performance and ruggedness.
This Supre MOS MOSFET fits the industry’s AC-DC SMPS
100% Avalanche Tested
requirements for PFC, server/telecom power, FPD TV power, Ro HS Compliant ATX power, and industrial power applications.
TO-247
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FCH22N60N Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
Continuous (TC = 25o C)
ID Drain Current
Continuous (TC = 100o C) 13.8
IDM Drain Current Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current 7.3 EAR Repetitive Avalanche Energy 2.75 m J Peak Diode Recovery dv/dt (Note 3)
dv/dt V/ns
MOSFET dv/dt
(TC = 25o C)
PD Power Dissipation
Derate above 25o C 1.64 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCH22N60N Units RθJC Thermal Resistance, Junction to Case 0.61
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient 40
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCH22N60N Rev. A
Page Summary Contents For Fairchild FCH22N60N Technical Specifications Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 379.93 KB |
| Published | July 07, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What are the key operational features of this MOSFET?
It's a SupreMOS device with deep trench filling, offering super-junction technology, ultra-low gate charge (Typ. Qg = 45nC), and superior switching performance.
What is the maximum continuous drain current and operating temperature range?
The maximum continuous drain current is rated at 22 A at 25°C. It operates in a temperature range of -55 to +150 °C.
Is this component suitable for various power applications?
Yes, it fits AC-DC SMPS, PFC, server/telecom power, FPD TV power, and industrial applications, and is RoHS Compliant.
What is the static drain to source on resistance (Rds(on))?
Under typical conditions, the static drain to source on resistance is 0.140 Ω.
How must I handle potential counterfeit parts?
Always purchase parts directly from Fairchild or an Authorized Fairchild Distributor for genuine components and full traceability.