Fairchild FQPF5P20 Technical Data Sheet

May 2000

QFETTM

FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect

Features

transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-3.4A, -200V, RDS(on) = 1.4Ω @VGS = -10 V

This advanced technology has been especially tailored to

Low gate charge ( typical 10 n C)

minimize on-state resistance, provide superior switching

Low Crss ( typical 12 p F)

performance, and withstand high energy pulse in the

Fast switching

avalanche and commutation mode. These devices are well

100% avalanche tested

suited for high efficiency switching DC/DC converters.

SD TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF5P20 Units VDSS Drain-Source Voltage -200 ID Drain Current - Continuous (TC = 25°C) -3.4

- Continuous (TC = 100°C) -2.15

IDM Drain Current - Pulsed (Note 1) -13.6 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -3.4 EAR Repetitive Avalanche Energy (Note 1) 3.8 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.3 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.29 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2000 Fairchild Semiconductor International Rev. A, May 2000