Fairchild FDB024N06 Technical Data Sheet
Summary
Datasheet for the Fairchild FDB024N06 N-Channel PowerTrench MOSFET. This 60V, 265A power device features ultra-low on-state resistance of 2.4mΩ, fast switching speed, and low gate charge. Manufactured using advanced trench technology for high-efficiency DC-DC converters and synchronous rectification applications. Available in D-PAK package with RoHS compliance. Targeted at power electronics engineers and designers in industrial and automotive sectors.
Page 1 Text Content
FD 024N 06 N -C hannel Pow er Trench SFET
July 2008
FDB024N06
N-Channel Power Trench® MOSFET 60V, 265A, 2.4mΩ Features General Description RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that has been
Fast switching speed
especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low gate charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability Application Ro HS compliant
DC to DC convertors / Synchronous Rectification
D2-PAK FDB Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage
VGSS Gate to Source Voltage ±20
Drain Current - Continuous (TC = 25o C, Silicon Limited) 265*
ID - Continuous (TC = 100o C, Silicon Limited) 190* - Continuous (TC = 25o C, Package Limited)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 2.6 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.38
RθJA Thermal Resistance, Junction to Ambient 62.5
©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB024N06 Rev. A3
Page Summary Contents For Fairchild FDB024N06 Technical Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 614.49 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the typical on-resistance of the FDB024N06 MOSFET?
The typical R_DS(on) is 1.8mΩ at V_GS=10V and I_D=75A.
What is the maximum continuous drain current?
The continuous drain current is 265A at T_J=25°C (silicon limited) and 120A (package limited).
What applications is this MOSFET designed for?
It is designed for applications like DC to DC converters and synchronous rectification.
What is the gate threshold voltage range?
The gate threshold voltage (V_GS(th)) ranges from 2.5V min to 4.5V max, with a typical value of 3.5V.
What is the maximum gate-to-source voltage?
The absolute maximum gate-to-source voltage (V_GSS) is ±20V.