Fairchild FDA24N50 Technical Data Sheet
Summary
The FDA24N50 is a high-efficiency N-Channel MOSFET engineered using advanced DIMOS planar stripe technology, ideal for applications requiring robust switching up to 500V and 24A. This comprehensive manual provides critical technical specifications, including maximum ratings, detailed electrical characteristics, dynamic performance curves, and temperature dependency data. It serves engineers designing modern, high-efficiency circuits such as switching mode power supplies (SMPS) and active power factor correction systems that demand fast switching and reliability.
Page 1 Text Content
FD 24N 50 N -C hannel M SFET
August 2008
Uni FETTM
FDA24N50 N-Channel MOSFET 500V, 24A, 0.19Ω Features Description RDS(on) = 0.16Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
Low gate charge ( Typ. 65n C)
DMOS technology.
Low Crss ( Typ. 35p F)
This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor-
Fast switching
mance, and withstand high energy pulse in the avalanche and
100% avalanche tested commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
Improved dv/dt capability
correction.
Ro HS compliant
TO-3PN
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C)
ID Drain Current
-Continuous (TC = 100o C)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 2.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 2.2 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.46
o C/WRθCS
Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient 40
©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDA24N50 Rev. A
Page Summary Contents For Fairchild FDA24N50 Technical Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 688.89 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the maximum Drain-Source Breakdown Voltage (V_DSS)?
The device has a V_DSS rating of 500 V.
What are the continuous and pulsed drain current ratings?
Continuous drain current (I_D) is 24 A, and single pulsed current is 96 A.
What temperature range can this MOSFET operate in?
The operating temperature range is -55 to +150 °C.
Is the device compliant with environmental standards?
Yes, it is RoHS compliant and has a maximum lead temperature of 300°C.