Toshiba TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG125FU,TC7WG125FK Data Manual

TC7WG125FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG125FU,TC7WG125FK Dual Bus Buffer with 3-STATE Output Features • High-level output current: IOH/IOL = ±8 m A (min)

TC7WG125FU

at VCC = 3 V • High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15p F • Operating voltage range: VCC = 0.9~3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs

TC7WG125FK

Marking

SM8 US8

Product name

G 125 Lot. No WG

Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.)

Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V

G1 VCC

DC input voltage VIN −0.5~7.0 V

−0.5~4.6 (Note 1) A1 G2

DC output voltage VOUT

−0.5~VCC + 0.5 (Note 2)

Input diode current IIK −20 m A

Output diode current IOK −20 (Note 3) m A GND A2

DC output current IOUT ±25 m A DC VCC / ground current ICC ±100 m A

Power dissipation PD 300 (SM8)

200 (US8) m W

Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: VCC = 0V Note 2: High or Low State. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND