Siemens BTS 725 L1 User Manual and Service Handbook (1), (1)
Summary
Introducing the robust BTS 725 L1, a smart two-channel power FET switch designed for microcontroller integration. This high-performance device offers extensive built-in protection features, including overload detection, overvoltage/undervoltage shutdown, and open load monitoring. The accompanying manual provides comprehensive technical specifications, detailed pin definitions, and operating guidelines needed by engineers to design reliable, fault-tolerant switching circuits. It is the optimal choice for applications needing stable power control, particularly with resistive and lamp loads.
Page 1 Text Content
PROFET® Preliminary BTS 725 L1
Smart Two Channel Highside Power Switch
Product Summary Features Overvoltage Protection Vbb(AZ)
• Overload protection Vbb(on) 5.0 ... 24
Operating voltage
• Current limitation
active channels: one two parallel
• Short-circuit protection
On-state resistance RON mΩ
• Thermal shutdown
• Overvoltage protection Nominal load current IL(NOM) 4.0 6.0 (including load dump) Current limitation IL(SCr)
• Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback for 12 V DC grounded loads • Most suitable for resistive and lamp loads • Replaces electromechanical relays and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Pin Definitions and Functions
Pin Symbol Function
Pin configuration (top view)
1,10, Vbb Positive power supply voltage. Design the 11,12, wiring for the simultaneous max. short circuit
Vbb 1 • Vbb
15,16, currents from channel 1 to 2 and also for low
19,20 thermal resistance GND1 Vbb IN1 Input 1,2, activates channel 1,2 in case of IN1 OUT1 IN2 logic high signal ST1 OUT1 17,18 OUT1 Output 1,2, protected high-side power output N.C. Vbb 13,14 OUT2 of channel 1,2. Design the wiring for the max. GND2 Vbb
short circuit current IN2 OUT2
ST1 Diagnostic feedback 1,2 of channel 1,2, ST2 OUT2 ST2 open drain, low on failure N.C. Vbb GND1 Ground 1 of chip 1 (channel 1)
Vbb Vbb
GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group 03.96
Page Summary Contents For Siemens BTS 725 L1 User Manual and Service Handbook (1), (1)
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 14 |
| File Size | 190.50 KB |
| Published | June 02, 2026 |
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