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Siemens BFQ 81 Data Sheet

Summary

This high-performance NPN Silicon RF Transistor is engineered for mission-critical telecommunications applications, excelling in low-noise amplifiers (LNA) and broadband analog/digital circuitry up to 2GHz. This comprehensive technical manual provides detailed operational specifications including maximum ratings, AC/DC characteristics across varying frequencies, power gain details, and ready-to-use SPICE models. It is essential for electrical engineers and circuit designers developing complex high-frequency electronic systems requiring reliable signal amplification and robust performance in demanding environments.

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查询BFQ81供应商

BFQ 81

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 m A to 20 m A.

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23

Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC m A Base current IB Total power dissipation Ptot m W TS ≤ 59 °C Junction temperature Tj °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance

Junction - soldering point 1) Rth JS ≤ 325 K/W

1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group Dec-12-1996

Page Summary Contents For Siemens BFQ 81 Data Sheet

Page 1 查询BFQ81供应商 BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 m A to 20 m...
Page 2 BFQ 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 m A, IB =...
Page 3 BFQ 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T GHz IC = 15 m A, VCE = 8 V, f = 500 ...
Page 4 BFQ 81 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 f A BF = NF = 0.80846 VAF = IKF = 0.22241 ISE = 5.8728 f A NE = 1.0668 BR = 25.974 NR = 0.3632...
Page 5 BFQ 81 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy °C TA,TS Permissible Pulse Load Rth JS = f (tp) Permissible Pulse Load Ptotmax/Ptot DC = f (tp) Rth JS Ptotmax/Ptot DC K/W ...
Page 6 BFQ 81 Collector-base capacitance Ccb = f (VCB) Transition frequency f T = f (IC) VBE = vbe = 0, f = 1MHz VCE = Parameter Ccb f T 0.7 VR IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = ...
Page 7 BFQ 81 Power Gain Gma, Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz IC=15m A 0.9GHz d...

Manual Details

Brand Siemens
Pages 7
File Size 59.44 KB
Published June 06, 2026
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Frequently Asked Questions

Is this transistor sensitive to electrostatic discharge?

Yes, it is an ESD sensitive device; observing handling precautions is required.

What is the maximum permissible collector-emitter voltage ($V_{CEO}$)?

The maximum rated collector-emitter voltage is 16 V.

What is the typical Noise Figure (NF) for this component?

The characteristic noise figure reported is 0.80846 dB.

What range of frequency does it maintain good power gain across?

Power gain figures are provided at standard frequencies like 900 MHz and up to 2.5 GHz depending on the parameter used.