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Siemens BFQ 70 Data Handbook

Summary

This robust NPN Silicon RF Transistor is designed for low-noise IF and broadband amplification in critical antenna and telecommunications equipment. Suitable for collector currents between 2 mA and 20 mA, it features a reliable ceramic package for high performance. This technical manual provides complete data sheets, including detailed DC/AC electrical characteristics, maximum ratings, Noise Figure curves, Power Gain measurements (S-Parameters), and operating parameters necessary for circuit design. It is essential reading for RF engineers and electronics designers building complex, high-frequency communication systems.

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Page 1 Text Content

查询BFQ70供应商

NPN Silicon RF Transistor BFQ 70

For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 m A to 20 m A. Hermetically sealed ceramic package Hi Rel/Mil screening available.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BFQ 70 Q62702-F77470 Cerex-X

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0

Collector-emitter voltage, VBE = 0 VCES

Collector-base voltage VCB0 Emitter-base voltage VEB0 2.5

Collector current IC m A

Base current IB

Total power dissipation, TS ˚C3) Ptot m W

Junction temperature Tj ˚C

Ambient temperature range TA – 65 … + 175

Storage temperature range Tstg – 65 … + 175

Thermal Resistance

Junction - ambient2) Rth JA ≤ 260 K/W Junction - soldering point3) Rth JS ≤ 180

1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 16 mm × 25 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

Page Summary Contents For Siemens BFQ 70 Data Handbook

Page 1 查询BFQ70供应商 NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 m A to 20 m A. Hermetically sealed ceramic ...
Page 2 BFQ 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC = 1 m A, IB...
Page 3 BFQ 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. AC Characteristics f T GHz Transition frequency IC = 3 m A, VCE = 6 V, f = 200 ...
Page 4 BFQ 70 Total power dissipation Ptot = f (TA*; TS) Transition frequency f T = f (IC) *Package mounted on alumina VCE = 6 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz
Page 5 BFQ 70 Common Emitter Noise Parameters Fmin Gp(Fmin) Γopt RN F50 Gp(F50Ω) GHz d B d B MAG ANG d B d B IC = 3 m A, VCE = 6 V, Z0 = 50 0.01 0.8 (ZS = 150 Ω) 1.2 IC = 5 m A, VCE = 6 V, Z0 = 50 0.01 0.85 ...
Page 6 BFQ 70 Circles of constant noise figure F = f (ZS) Noise figure F = f (IC) in ZS-plane, IC = 5 m A, VCE = 6 V, f = 800 MHz Power gain G = f (IC) VCE = 6 V, f = 800 MHz, ZLopt (G)
Page 7 BFQ 70 Common Emitter Power Gain 2 = 2 = Power gain Gms, I S21e I f (IC) Power gain Gms, I S21e I f (IC) VCE = 6 V, f = 200 MHz, Z0 = 50 VCE = 6 V, f = 500 MHz, Z0 = 50 Power gain Gms, I S21e I f (IC)...
Page 8 BFQ 70 Power gain Gms, I S21e I f (f) Power gain Gma, Gms, I S21e I f (f) IC = 2 m A, VCE = 6 V, Z0 = 50 IC = 5 m A, VCE = 6 V, Z0 = 50 Power gain Gma, Gms, I S21e I f (f) Power gain Gma, Gms, I S21e ...
Page 9 BFQ 70 Common Emitter S Parameters GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 2 m A, VCE = 6 V, Z0 = 50 0.1 0.92 – 23 7.00 0.025 0.98 – 8 0.2 0.89 – 45 6.42 0.049 0.93 – 16 0.3 0.84 – 65 5.74 0.068 0.87...
Page 10 BFQ 70 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 m A, VCE = 6 V, Z0 = 50 0.1 0.84 – 35 14.47 0.023 0.95 – 14 0.2 0.78 – 66 12.38 0.042 0.83 – 26 0.3 0.72 – 90 ...
Page 11 BFQ 70 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 6 V, Z0 = 50 0.1 0.73 – 50 22.77 0.021 0.89 – 21 0.2 0.67 – 89 17.57 0.034 0.71 – 34 0.3 0.63 – 11...
Page 12 BFQ 70 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 15 m A, VCE = 6 V, Z0 = 50 0.1 0.67 – 62 27.86 0.019 0.84 – 25 0.2 0.62 – 104 20.01 0.029 0.63 – 38 0.3 0.59 – 1...
Page 13 BFQ 70 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 20 m A, VCE = 6 V, Z0 = 50 0.1 0.63 – 71 31.01 0.017 0.81 – 28 0.2 0.60 – 113 21.18 0.026 0.58 – 40 0.3 0.58 – 1...
Page 14 BFQ 70 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 10 V, Z0 = 50 0.1 0.75 – 45 22.64 0.018 0.91 – 18 0.2 0.69 – 83 17.84 0.030 0.75 – 29 0.3 0.63 – 1...

Manual Details

Brand Siemens
Pages 14
File Size 346.88 KB
Published June 05, 2026
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Frequently Asked Questions

Is the BFQ 70 sensitive to static electricity?

Yes, it is an ESD sensitive device, so proper handling precautions must be observed.

What is the maximum allowed ambient temperature range?

The component supports an ambient temperature range from -65°C to +175°C.

What is the specified total power dissipation (Ptot)?

The maximum total power dissipation is 300 mW.

What is the reported transition frequency ($f_T$)?

The transition frequency $f_T$ can reach up to 3.6 GHz at specific operating conditions.