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2M x 8 - Bit Dynamic RAM HYB3117805BSJ -50/-60/-70 2k Refresh (Hyper Page Mode- EDO) Advanced Information 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance: t RAC RAS ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM The HYB 3117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technolog...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM P-SOJ-28-3 400 mil VCC VSS WE CAS RAS OE N.C. A9 A10 A8 A0 A7 A1 A6 A2 A5 A3 Pin Configuration Semiconductor Group
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM WE CAS Data in Data out Buffer Buffer No. 2 Clock Generator Column Address Column Buffer(10) Decoder A1 A2 A3 Refresh Sense Amplifier A4 Controller I/O Gating ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM Absolute Maximum Ratings Operating temperature range ............................................................................................0 to 70 °C Sto...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM DC Characteristics TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, t T = 2 ns Parameter Symbol Limit Values Unit Test Conditionmin. Average VCC supply current...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM AC Characteristics TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, t T = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. common par...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM AC Characteristics (cont’d) 5)6) 16E TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, t T = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. mi...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM AC Characteristics (cont’d) 5)6) 16E TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, t T = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. mi...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM Notes: 1) All voltages are referenced to VSS. 2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values ar...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RC t RAS t RP t CSH t CRPt RSHt RCD t CAS t RAD t RAL t ASR t CAHt ASC t ASR Address Row Column Row t RCH t RAH t RRHt RCS t OEA t DZC t CDD t ODD t DZO I/O ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RC t RAS t RP t CSH t CRPt RSHt RCD t CAS t RAD t RAL t ASR t CAH t ASC t ASR Column Row Row Address t CWL t RAH t WCS t WP t WCH t RWL t DS t DH I/O IH Vali...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RC t RAS t RP t CSH t CRPt RSHt RCD t CAS t RAD t RAL t ASR t CAH t ASC t ASR Column Row Row Address t CWL t RAH t RWL t WP t OEH VIL t ODD t DZO t DS t DZC ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RWC t RPt RAS t CSH t RCD t RSH t CRP t CAS IH VIL t RAH t CAH t ASR t ASC t ASR IH Address Column Row Row t AWD t CWL t RAD t CWD t RWL t RWD t RCS t OEA t ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RAS IH t RCD t RHCP t RSH t HPC t CRP t CRP t CAS t CASt CASt CP t CSH t RAL t RAHt ASR t ASC t CAH t ASC t ASC t CAHt CAH Address Column 2Row Column NColumn...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RAS IH t RCD t RHCP t RSH t CRP t HPC t CRP t CAS t CASt CASt CP t CSH t RAL t RAHt ASR t ASC t CAH t ASC t ASC t CAHt CAH Address Column 1 Column 2Row Colum...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM IH re ss ow ol um ol um ol um ow IL at In at In at In (I ts IL LZ at at at (O tp ts ut ut ut Hyper Page Mode (EDO) Late Write and Read-Modify Write Cycle Semic...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RPt RAS t CRP t RPC t RAH t ASR t ASR Address Row Row (Outputs) VOL “H” or “L” RAS-Only Refresh Cycle Semiconductor Group
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RPt RASt RP t RPC t CSR t CRP t CP t RPC t CHR t WRP t WRH t OEZ t CDD I/O IH (Inputs) t ODD (Outputs) VOL t OFF “H” or “L” CAS-Before-RAS Refresh Cycle Semi...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RC t RC t RP t RP t RASt RAS t RSH t RCD t CRPt CHR VIL t RAD t ASC t WRP t RAH t ASR t CAH t WRH t ASR IH Address Row Column Row t RRH t RCS t AA t OEA t DZ...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RC t RC t RAS t RAS t RCD t RSH t CRPt CHR VIL t RAD t RAH t ASC t ASR t ASR t CAH IH Address Row Column Row t WCS t WCH t WRP t WRH t DS t DH Valid Data (In...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RPSt RASSt RP t RPC t CRP t CHS t CSR t CP t WRP t WRH t CDD I/O IH (Inputs) t ODD t OEZ I/O OH (Outputs) VOL t OFF “H” or “L” WL13 Self Refresh Semiconducto...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RPt RAS Read Cycle: RAS VIH t RSH t CSR t CHR t CAS t RAL t ASRt ASC t CAH Address Column Row t WRP t AA t RRH t RCH WE t CAC t WRH t RCS t OEA t CDD t DZC V...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM t RAS t RP t RPC t CP t CSR t RPC t CRPt CHR t RAHt ASR Address t WTS t WTH t ODD I/O IH (Inputs) t CDD t OEZ I/O OH (Outputs) t OFF “H” or “L” Test Mode Entry...
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HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM Plastic Package P-SOJ-28-3 (400mil) (Small Outline J-lead, SMD) 1.27 0.81max GPJ05699 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max...
