Title: SIEMENS HYB 514256B BJ-50 60 70 256K x 4-Bit Dynamic RAM, HYB 514256BL BJL-50 60 70 Low Power 256K x 4-Bit Dynamic RAM User Manual
Summary
This technical manual provides comprehensive specifications for the HYB series of 256K x 4-bit Low Power Dynamic RAM (DRAM). Engineered with advanced CMOS technology and available in multiple packaging styles, this memory component features robust operating margins ideal for embedded systems. The documentation is designed for hardware engineers and electronic designers, covering detailed electrical characteristics, absolute maximum ratings, timing protocols, and architectural diagrams necessary to ensure optimal integration into complex or battery-backup applications.
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查询HYB514256B供应商
256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 Low Power 256 K × 4-Bit Dynamic RAM HYB 514256BL/BJL-50/-60/-70
Advanced Information 262 144 words by 4-bit organization
Single + 5 V (± 10 %) supply with a built-in VBB
Fast access and cycle time generator 50 ns access time Output unlatched at cycle end allows two- 95 ns cycle time (-50 version) dimensional chip selection 60 ns access time Read-modify-write, CAS-before-RAS 110 ns cycle time (-60 version) refresh, RAS-only refresh, hidden-refresh 70 ns access time and fast page mode capability 130 ns cycle time (-70 version) All inputs, outputs and clocks
Fast page mode cycle time TTL-compatible 35 ns (-50 version) 512 refresh cycles/8 ms 40 ns (-60 version) 512 refresh cycles/64 ms 45 ns (-70 version) for L-version only Plastic Packages: P-DIP-20-2,
Low power dissipation
P-SOJ-26/20-1
max. 495 m W active (-50 version) max. 440 m W active (-60 version) max. 385 m W active (-70 version) max. 5.5 m W standby max. 1.1 m W standby for L-version
Ordering Information
Type Ordering Code Package Description HYB 514256B-50 Q67100-Q1044 P-DIP-20-2 DRAM (access time 50ns) HYB 514256B-60 Q67100-Q530 P-DIP-20-2 DRAM (access time 60 ns) HYB 514256B-70 Q67100-Q433 P-DIP-20-2 DRAM (access time 70 ns) HYB 514256BJ-50 Q67100-Q1054 P-SOJ-26/20-1 DRAM (access time 50 ns) HYB 514256BJ-60 Q67100-Q536 P-SOJ-26/20-1 DRAM (access time 60 ns) HYB 514256BJ-70 Q67100-Q537 P-SOJ-26/20-1 DRAM (access time 70 ns) HYB 514256BL-50 on request P-DIP-20-2 DRAM (access time 50 ns) HYB 514256BL-60 Q67100-Q542 P-DIP-20-2 DRAM (access time 60 ns) HYB 514256BL-70 Q67100-Q543 P-DIP-20-2 DRAM (access time 70 ns) HYB 514256BJL-50 on request P-SOJ-26/20-1 DRAM (access time 50 ns) HYB 514256BJL-60 Q67100-Q608 P-SOJ-26/20-1 DRAM (access time 60 ns) HYB 514256BJL-70 Q67100-Q607 P-SOJ-26/20-1 DRAM (access time 70 ns)
Semiconductor Group 01.95
Page Summary Contents For Title: SIEMENS HYB 514256B BJ-50 60 70 256K x 4-Bit Dynamic RAM, HYB 514256BL BJL-50 60 70 Low Power 256K x 4-Bit Dynamic RAM User Manual
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 22 |
| File Size | 216.85 KB |
| Published | June 04, 2026 |
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Frequently Asked Questions
What is the maximum operating temperature?
The operating temperature range is from 0 to +70°C.
Which variants support advanced low-power features for battery backup?
The HYB 514256BL/BJL series are specially selected for battery backup applications.
What internal architecture does the DRAM use?
It is organized as 2^24 (16 million) words by 4-bit, utilizing CMOS silicon gate process technology.
What packages and access times are available?
Packages include P-DIP-20-2 and P-SOJ-26/20-1. Access times range from 50 ns to 70 ns depending on the model (-50, -60, -70).
What is the standby current for low power variants?
Standby currents are listed per variant but generally include values like max. 385 mW active and up to 1.1 mW standby for L-version.