TEXAS INSTRUMENTS TM2SN64EPH, 2097152 BY 64-BIT TM4SN64EPH, 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES - Data Manual/Instructions
Summary
Enhance your system's computing power with these high-speed Synchronous Dynamic RAM (SDRAM) memory modules. These robust DIMMs are designed for engineers developing performance-critical hardware that requires reliable data storage and high-frequency operation. The technical manual provides comprehensive specifications, including detailed pin assignments, operational parameters, and functional diagrams for both 16MB and 32MB configurations. Use this guide to ensure proper integration of memory into your advanced computing or embedded systems.
Page 1 Text Content
查询TM2SN64EPH供应商 TM2SN64EPH 2097152 BY 64-BIT
TM4SN64EPH 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS706A – MARCH 1998 – REVISED APRIL 1998
Organization: High-Speed, Low-Noise, Low-Voltage TTL – TM2SN64EPH . . . 2 097 152 x 64 Bits (LVTTL) Interface – TM4SN64EPH . . . 4 194 304 x 64 Bits
Read Latencies 2 and 3 Supported
Single 3.3-V Power Supply
Support Burst-Interleave and
(±10% Tolerance)
Burst-Interrupt Operations
Designed for 66-MHz 4-Clock Systems
Burst Length Programmable to 1, 2, 4, JEDEC 168-Pin Dual-In-Line Memory and 8
Module (DIMM) Without Buffer for Use With
Two Banks for On-Chip Interleaving
Socket
(Gapless Access)
TM2SN64EPH — Uses Eight 16M-Bit
Ambient Temperature Range
Synchronous Dynamic RAMs (SDRAMs)
0°C to 70°C
(2M × 8-Bit) in Plastic Thin Small-Outline
Gold-Plated Contacts
Packages (TSOPs)
Pipeline Architecture
TM4SN64EPH — Uses Sixteen 16M-Bit
Serial Presence Detect (SPD) Using
SDRAMs (2M × 8-Bit) in Plastic TSOPs
EEPROM
Byte-Read/Write Capability Performance Ranges:
SYNCHRONOUS ACCESS TIME REFRESH CLOCK CYCLE CLOCK TO INTERVAL TIME OUTPUT
t CK3 t CK2 t AC3 t AC2 (CL = 3)† (CL = 2) (CL = 3) (CL = 2)
’x SN64EPH-10 10 ns 15 ns 7.5 ns 7.5 ns 64 ms CL = CAS latency
description The TM2SN64EPH is a 16M-byte, 168-pin dual-in-line memory module (DIMM). The DIMM is composed of eight TMS626812BDGE, 2097152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS626812B data sheet (literature number SMOS693). The TM4SN64EPH is a 32M-byte, 168-pin DIMM. The DIMM is composed of sixteen TMS626812BDGE, 2097152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic TSOP mounted on a substrate with decoupling capacitors.
operation The TM2SN64EPH operates as eight TMS626812BDGE devices that are connected as shown in the TM2SN64EPH functional block diagram. The TM4SN64EPH operates as sixteen TMS626812BDGE devices connected as shown in the TM4SN64EPH functional block diagram.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
1POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
Page Summary Contents For TEXAS INSTRUMENTS TM2SN64EPH, 2097152 BY 64-BIT TM4SN64EPH, 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES - Data Manual/Instructions
Manual Details
| Brand | Texas Instruments |
|---|---|
| Pages | 15 |
| File Size | 235.18 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What kind of operating temperature range is supported?
The ambient temperature range for these SDRAMs is 0°C to 70°C.
Can the modules support burst-interleave operations?
Yes, they support Burst-Interleave and (±10% Tolerance) Burst-Interrupt Operations.
What kind of power supply does it require?
It requires a Single 3.3-V Power Supply.
How is the TM2SN64EPH module constructed?
It is composed of eight TMS626812BDGE SDRAMs in TSOP packages.