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Siemens BSM 50 GAL 120 DN2 Data Sheet

Summary

The BSM 50 GAL 120 DN2 is a high-performance IGBT Power Module, designed as a robust half-bridge switch with integrated chopper and fast free-wheeling diodes for demanding power electronic applications. Ideal for engineers designing industrial motor drives, inverters, and switching systems that require reliable and efficient energy conversion. This comprehensive manual provides all necessary technical specifications—including maximum ratings, detailed electrical characteristics, and precise switching behavior data—to ensure accurate system integration and optimal performance in harsh operational environments.

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查询BSM50GAL120DN2供应商

BSM 50 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate

Type VCE IC Package Ordering Code

BSM 50 GAL 120 DN2 1200V 78A HALF BRIDGE GAL 1 C67076-A2010-A70

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Gate-emitter voltage VGE ± 20 DC collector current IC TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot TC = 25 °C Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case Rth JC ≤ 0.3 K/W

Diode thermal resistance, chip case Rth JCD ≤ 0.6 Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.5

Insulation test voltage, t = 1min. Vis Vac Creepage distance mm Clearance DIN humidity category, DIN 40 040 F - IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group Mar-29-1996

Page Summary Contents For Siemens BSM 50 GAL 120 DN2 Data Sheet

Page 1 查询BSM50GAL120DN2供应商 BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering...
Page 2 BSM 50 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC...
Page 3 BSM 50 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on de...
Page 4 BSM 50 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Chopper Diode Chopper diode forward voltage VFC IFC = 75 A, VGE = 0...
Page 5 BSM 50 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g

Manual Details

Brand Siemens
Pages 5
File Size 66.23 KB
Published June 01, 2026
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Frequently Asked Questions

What are the maximum ratings for this IGBT module?

The collector-emitter voltage (Vce) is rated at 1200 V, and the DC collector current (IcT) is 78 A.

What components and protections does the BSM 50 GAL 120 DN2 include?

It is a single switch with an included chopper diode, fast free-wheeling diodes, and uses a package with an insulated metal base plate.

What is the permissible operating temperature range for the module?

The storage temperature ranges from -55 °C to +150 °C, and the optimal operating temperatures are listed in the specific parameters defined.

How large and heavy is the physical device package?

Dimensions are given in millimeters (not specified), and the total weight of the module is 250 g.