SIEMENS SPD21N05L SPU21N05L Data Sheet
Summary
Explore the detailed technical specifications for this high-power N-channel MOSFET (Transistor), designed for robust switching applications. This comprehensive manual provides essential data on maximum ratings, electrical performance curves, and dynamic characteristics under various operating conditions. It is an indispensable resource for power electronics engineers and hardware designers requiring reliable component selection for efficient and demanding circuit implementations up to 175°C.
Page 1 Text Content
SPD21N05L SPU21N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated
Pin 1 Pin 2 Pin 3
• 175°C operating temperature
Type VDS ID RDS(on) Package Ordering Code SPD21N05L 55 V 20 A 0.07 Ω P-TO252 Q67040 - S4137- A2 SPU21N05L 55 V 20 A 0.07 Ω P-TO251 Q67040 - S4131 - A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls TC = 25 °C Avalanche energy, single pulse EAS m J ID = 20 A, VDD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C Avalanche current,limited by Tjmax IAR Avalanche energy,periodic limited by Tjmax EAR 5.5 m J Reverse diode dv/dt dv/dt k V/µs IS = 20 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C Gate source voltage VGS ± 14 Power dissipation Ptot TC = 25 °C
Semiconductor Group 29/Jan/1998
Page Summary Contents For SIEMENS SPD21N05L SPU21N05L Data Sheet
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 8 |
| File Size | 145.07 KB |
| Published | May 31, 2026 |
Enter the captcha to get the download link:
