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Siemens BGA 310 Data Sheet

Summary

This detailed datasheet provides comprehensive technical specifications for the BGA 310 Silicon Bipolar MMIC-Amplifier, an essential component for high-frequency RF applications. The manual covers electrical characteristics, s-parameters analysis over a wide frequency range (DC to 10 GHz), maximum operational limits, and recommended biasing circuits. It is designed for professional RF engineers and electronics designers building compact communication systems needing reliable amplification and low noise performance within a small package footprint.

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查询BGA310供应商

BGA 310

Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 d B typical gain at 1.0 GHz • 9 d Bm typical P-1d B at 1.0 GHz • 3 d B-bandwidth: DC to 2.4 GHz

RF OUT/Bias

VPS05178

RF IN

Circuit Diagram

EHA07312

Type Marking Ordering Code Pin Configuration Package BGA 310 BLs Q62702-G0041 1 RFout/bias 2 GND 3 RF input 4 GND SOT-143

Maximum Ratings Parameter Value Symbol Unit Device current ID m A60

Total power dissipation, TS ≤ 99 °C 250Ptot m W

RF input power d Bm10PRFin Tj Junction temperature °C

Ambient temperature TA -65 ...+150 Storage temperature Tstg -65 ...+150

Thermal Resistance

Junction - soldering point 1) Rth JS ≤ 205 K/W

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group Sep-04-19981 Semiconductor Group 1998-11-01

Page Summary Contents For Siemens BGA 310 Data Sheet

Page 1 查询BGA310供应商 BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 d B typical gain at 1.0 GHz • 9 d Bm typical P-1d B at 1.0 GHz • 3 d B-bandwidth: DC to 2.4 GHz RF ...
Page 2 BGA 310 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Values Symbol Unit max.typ.min. AC characteristics (VD = 4.7 V, Zo = 50 Ω) |S21|2Insertion power gain d B f = 0....
Page 3 BGA 310 S-Parameters at TA = 25 °C S11 S22S12S21 MAGMAG ANGANG MAG ANGGHz MAG ANG VD = 4.7 V, Zo = 50Ω 0.01 0.051 176.4 3.22 179.3 0.149 0.2 0.159 -0.5 0.1 0.053 168.1 3.23 174.9 0.149 1.2 0.158 -6.1 ...
Page 4 BGA 310 Output power 1-d B-gain compression P-1d B = f ( f ) VD = 4.7 V, ID = 42 m A 10 -1 10 0 10 1 GHz Semiconductor Group Sep-04-19984 Semiconductor Group 1998-11-01

Manual Details

Brand Siemens
Pages 4
File Size 25.07 KB
Published June 06, 2026
19 views

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Frequently Asked Questions

What operational temperature range does this component support?

The device operates across a wide temperature range of -65 to +150 °C.

What is the minimum required bias voltage (V CC)?

The typical biasing configuration requires a minimum V CC of 7V.

What is the typical insertion power gain measured at 1.0 GHz?

The typical |S21| insertion power gain listed for 1.0 GHz is 9 dB.