# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Siemens BGA 425 Data Handbook

Summary

This high-performance BGA 425 Si-MMIC-Amplifier is a multifunctional integrated circuit designed for advanced RF signal processing applications, including Low Noise Amplifiers (LNA) and Mixers. The supporting manual provides comprehensive electrical characteristics, detailing critical operational parameters such as insertion gain, noise figure, and reverse isolation across multiple frequencies (up to 10 GHz). It serves electronics engineers who require precise components for complex RF circuit design and integration.

📄 Preview PAGE OF 8

Page 1 Text Content

查询BGA425供应商

BGA 425

Si-MMIC-Amplifier in SIEGET 25-Technologie

3Preliminary data

• Multifunctional casc. 50 Ω block (LNA / MIX) • Unconditionally stable • Gain |S21|2 = 18.5 d B at 1.8 GHz (appl.1) gain |S21|2 = 22 d B at 1.8 GHz (appl.2) IP3out = +7 d Bm at 1.8 GHz (VD=3V,ID=9.5m A)

VPS05605

• Noise figure NF = 2.2 d B at 1.8 GHz • Reverse isolation >28 d B (appl.1) >35 d B (appl.2)

Circuit Diagram

• typical device voltage VD = 2 V to 5 V Tape loading orientation

GNDESD: Electrostatic discharge sensitive device, EHA07371

observe handling precaution!

PIN Configuration

Type Marking Ordering Code 1, Out B 3, Out A2, GNDPackage BGA 425 Q62702-G0058 SOT-343 4, IN 5, GND 6, +VBMs

Maximum Ratings

Parameter Symbol Value Unit

Device current ID m A Device voltage VD,+V V6

Total power dissipation, TS ≤ tbd °C Ptot m W

RF input power PRFin -10 d Bm

Junction temperature Tj °C Ambient temperature TA -65 ...+150 Storage temperature Tstg -65 ...+150

Thermal Resistance

Junction - soldering point 1) Rth JS ≤ tbd K/W

1) TS is measured on the ground lead at the soldering point to the pcb Semiconductor Group Jul-14-19981 Semiconductor Group 1998-11-01

Page Summary Contents For Siemens BGA 425 Data Handbook

Page 1 查询BGA425供应商 BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 3Preliminary data • Multifunctional casc. 50 Ω block (LNA / MIX) • Unconditionally stable • Gain |S21|2 = 18.5 d B at 1.8 GHz (appl.1) g...
Page 2 BGA 425 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics VD = 3V, Zo = 50Ω, Testfixture Appl.1 Device current ID 8.5...
Page 3 BGA 425 Typical configuration Application 1 - 3 (LNA) Application 4 (Mix) Appl.1 Appl.2 100 p F RF OUT BGA 425 BGA 425 100 p F RF OUT RF IN RF IN EHA07372 100 p F10 n F EHA07373 Appl.3 Appl.4 100 p F ...
Page 4 BGA 425 Electrical characteristics at TA = 25 °C, unless otherwise specified. VD = 3 V Application 1 to 4 Applic. Insertion Gain Noise Figure Reverse Isol. Return Loss Return Loss |S21|2 (d B) NF (d B...
Page 5 BGA 425 For linear simulation please use on-wafer measurement data of our T501 chip an add resistive and capacitive elements, parasitics and package equivalent circuit. S-Parameters at TA = 25 °C (On-...
Page 6 BGA 425 Spice model BGA 425-chip including parasitics T2 T501 R1 14.5kΩ OUTB R2 280Ω R3 2.4kΩ 3RR1 C’-E’- RP1 1kΩ Diode OUTA 1C CP1 0.2p F RF IN T1 CP4 R4 CP2 0.2p F CP3 0.6p F CP4 0.1p F GND EHA07376...
Page 7 BGA 425 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 a A BF = 83.23 NF = 1.0405 VAF = 39.251 IKF = 0.16493 ISE = 15.761 f A NE = 1.7763 BR = 10.526 NR = 0.96647 VAR = 34.368 IKR ...
Page 8 BGA 425 IP 3o ut |S |2 Insertion power gain |S21|2 = f (f) Noise figure NF = f (f) VD, ID = parameter VD,ID = parameter VD=5V, ID=17.5m A VD=4V, ID=13.3m A VD=3V, ID=9.5m A VD=2V, ID=5.2m A 4.0 VD=5V,...

Manual Details

Brand Siemens
Pages 8
File Size 84.11 KB
Published June 06, 2026
28 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

How should I handle this device?

Be aware that this is an ESD sensitive device; you must observe general handling precautions.

What board design features are critical for installation?

Connection of large-value capacitors from pin 6 to ground near the device is essential. Also, use plated through holes at pins 2 and 5 on thin boards.

What are the primary electrical performance metrics at 1.8 GHz?

Typical gain $|S_{12}|$ is 18.5 dB, and the intercept point (IP) is +7 dBm when operating at V=3V and I=9.5mA.