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Siemens BF 550 Data Handbook

Summary

This datasheet summary for the BF550 PNP Silicon RF Transistor details a high-performance component designed for advanced radio frequency applications. Engineered for common emitter amplifier stages up to 300 MHz, it is ideally suited for use in AM/FM radios and VHF TV tuners, leveraging its low feedback capacitance and controlled output conductance. The manual provides comprehensive specifications, covering maximum ratings, DC/AC electrical characteristics (including transition and noise figures), and detailed parameter breakdowns necessary for professional electronics designers and engineers building sensitive radio circuits.

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查询BF550供应商

PNP Silicon RF Transistor BF 550

For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners Low feedback capacitance due to shield diffusion Controlled low output conductance

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BF 550 Q62702-F944LA SOT-23

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0 Collector-base voltage VCB0 Emitter-base voltage VEB0 Collector current IC m A Base current IB Total power dissipation, TA ≤ 25 ˚C Ptot m W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient2) Rth JA ≤ 450 K/W

1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm.

Semiconductor Group 07.94

Page Summary Contents For Siemens BF 550 Data Handbook

Page 1 查询BF550供应商 PNP Silicon RF Transistor BF 550 For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners Low feedback capacitance due to shield diffusion ...
Page 2 BF 550 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR) CE0 VCollector-emitter breakdown voltage IC = 1 m A, I...
Page 3 BF 550 Total power dissipation Ptot = f (TA) DC current gain h FE = f (IC) VCE = 10 Collector current IC = f (VBE) Collector-emitter saturation voltage VCE = 10 VCEsat = f (IC) h FE = 10 Semiconductor...
Page 4 BF 550 Collector cutoff current ICB0 = f (TA) Transition frequency f T = f (IC) VCB = 30 f = 100 MHz Collector-base capacitance Ccb = f (VCB) Output conductance g22e = f (IC) f = 1 MHz VCE = 10 V, f =...
Page 5 BF 550 Forward transfer admittance y21e I = f (IC) Forward transfer admittance y21e f = 10.7 MHz VCE = 10 Semiconductor Group

Manual Details

Brand Siemens
Pages 5
File Size 95.32 KB
Published June 02, 2026
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Frequently Asked Questions

What applications is the BF550 RF Transistor designed for?

It is suitable for common emitter amplifier stages up to 300 MHz, and mixer applications in AM/FM radios and VHF TV tuners.

What is the maximum specified transition frequency (fT)?

The datasheet lists the transition frequency (fT) as a minimum of 350 MHz.

What is the total power dissipation limit for this device?

The maximum overall power dissipation ($P_{tot}$) is 280 mW.

What package type and ordering code is listed for the BF550?

It comes in a SOT-23 package, with an associated ordering code prefix of Q62702-F944.