# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Siemens BFQ 75 Data Handbook

Summary

The BFQ 75 is a high-performance NPN Silicon RF transistor engineered for broadband amplifier circuits operating up to 2 GHz. This manual provides comprehensive technical documentation, including detailed maximum ratings, electrical characteristics (such as cutoff frequency $f_T$ and power gain), thermal limits, and crucial ESD handling precautions. It is the essential component reference for electronics engineers and circuit designers building high-frequency or specialized radio frequency equipment.

📄 Preview PAGE OF 3

Page 1 Text Content

查询BFQ75供应商

PNP Silicon RF Transistor BFQ 75

For broadband amplifiers up to 2 GHz at collector currents from 5 m A to 30 m A. Complementary type: BFQ 72 (NPN).

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration (tape and reel)

BFQ 75 Q62702-F80375 Cerec-X

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0 Collector-emitter voltage, VBE = 0 VCES Collector-base voltage VCB0 Emitter-base voltage VEB0

Collector current IC m A

Total power dissipation, TS ˚C3) Ptot m W

Junction temperature Tj ˚C

Ambient temperature range TA – 65 … + 175

Storage temperature range Tstg – 65 … + 175

Thermal Resistance

Junction - ambient2) Rth JA ≤ 260 K/W Junction - soldering point3) Rth JS ≤ 180

1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

Page Summary Contents For Siemens BFQ 75 Data Handbook

Page 1 查询BFQ75供应商 PNP Silicon RF Transistor BFQ 75 For broadband amplifiers up to 2 GHz at collector currents from 5 m A to 30 m A. Complementary type: BFQ 72 (NPN). ESD: Electrostatic discharge sensitive de...
Page 2 BFQ 75 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC = 1 m A, IB...
Page 3 BFQ 75 Total power dissipation Ptot = f (TA*; TS) Transition frequency f T = f (IC) *Package mounted on alumina VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz

Manual Details

Brand Siemens
Pages 3
File Size 34.70 KB
Published June 04, 2026
17 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the expected operating frequency range for this transistor?

It is designed for broadband amplifiers up to 2 GHz.

How sensitive is this component to static electricity?

Yes, it is an Electrostatic discharge (ESD) sensitive device, so handling precautions must be observed.

What are the maximum permissible continuous collector current ratings?

The maximum rated collector current ($I_C$) is 50 mA.

What key electrical characteristic measures its performance around 800 MHz?

Its power gain ($G_{pe}$) can reach a typical value of -14 dB at $I_C = 30 ext{ mA}$ and $V_{CE} = 8 ext{ V}$.