Siemens BFQ 71 Data Sheet

Summary

The BFQ71 is a specialized NPN Silicon RF Transistor, optimized for high-frequency applications such as broadband amplifiers up to 2 GHz and fast switching circuits. Designed to operate efficiently with collector currents from 1 mA to 20 mA, it features a robust hermetically sealed ceramic package. This comprehensive datasheet provides electrical engineers and RF designers with detailed technical specifications, including maximum ratings, AC/DC characteristics, power gain analyses ($\text{S-parameters}$), noise figures, and operational limits necessary for building reliable high-frequency circuits.

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查询BFQ71供应商

NPN Silicon RF Transistor BFQ 71

For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from m A to 20 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening available. CECC-type available: CECC 50002/260.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BFQ 71 Q62702-F77571 Cerec-X

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0 Collector-emitter voltage, VBE = 0 VCES Collector-base voltage VCB0 Emitter-base voltage VEB0 2.5

Collector current IC m A

Base current IB

Total power dissipation, TS ˚C3) Ptot m W

Junction temperature Tj ˚C

Ambient temperature range TA – 65 … + 175

Storage temperature range Tstg – 65 … + 175

Thermal Resistance

Junction - ambient2) Rth JA ≤ 320 K/W Junction - soldering point3) Rth JS ≤ 240

1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

Page Summary Contents For Siemens BFQ 71 Data Sheet

Page 1 查询BFQ71供应商 NPN Silicon RF Transistor BFQ 71 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from m A to 20 m A. Hermetically sealed ceramic package. Hi Rel/M...

Page 2 BFQ 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC = 1 m A, IB...

Page 3 BFQ 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. AC Characteristics f T GHz Transition frequency IC = 5 m A, VCE = 6 V, f = 200 ...

Page 4 BFQ 71 Total power dissipation Ptot = f (TA*; TS) Transition frequency f T = f (IC) *Package mounted on alumina VCE = 6 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz

Page 5 BFQ 71 Common Emitter Noise Parameters Fmin Gp(Fmin) Γopt RN F50 Gp(F50Ω) GHz d B d B MAG ANG d B d B IC = 2 m A, VCE = 6 V, Z0 = 50 0.01 1.1 (ZS = 150 Ω) 1.6 IC = 5 m A, VCE = 10 V, Z0 = 50 0.01 1.3 ...

Page 6 BFQ 71 Circles of constant noise figure F = f (ZS) Noise figure F = f (IC) and available power gain Gav = f (ZS) Power gain G = f (IC) IC = 5 m A, VCE = 10 V, f = 800 MHz VCE = 10 V, f = 800 MHz, ZLop...

Page 7 BFQ 71 Common Emitter Power Gain Power gain Gms, S21e 2 = f (IC) Power gain Gms, S21e 2 = f (IC) VCE = 6 V, f = 200 MHz, Z0 = 50 VCE = 6 V, f = 500 MHz, Z0 = 50 Power gain Gms, S21e 2 = f (IC) Powe...

Page 8 BFQ 71 Power gain Gms, S21e 2 = f (f) Power gain Gma, Gms,  S21e 2 = f (f) IC = 2 m A, VCE = 6 V, Z0 = 50 IC = 5 m A, VCE = 6 V, Z0 = 50 Power gain Gma, Gms, S21e 2 = f (f) Power gain Gma, Gms,  ...

Page 9 BFQ 71 Common Emitter S Parameters GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 2 m A, VCE = 6 V, Z0 = 50 0.1 0.90 – 19 6.93 0.025 0.98 – 8 0.2 0.87 – 37 6.45 0.048 0.94 – 16 0.3 0.81 – 55 5.85 0.068 0.88...

Page 10 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 m A, VCE = 6 V, Z0 = 50 0.1 0.79 – 31 14.23 0.023 0.95 – 14 0.2 0.73 – 59 12.37 0.040 0.84 – 26 0.3 0.66 – 83 ...

Page 11 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 6 V, Z0 = 50 0.1 0.68 – 47 22.06 0.020 0.90 – 20 0.2 0.60 – 85 17.31 0.032 0.73 – 33 0.3 0.55 – 11...

Page 12 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 15 m A, VCE = 6 V, Z0 = 50 0.1 0.56 – 57 25.74 0.018 0.85 – 23 0.2 0.47 – 96 18.17 0.028 0.65 – 32 0.3 0.42 – 12...

Page 13 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 20 m A, VCE = 6 V, Z0 = 50 0.1 0.54 – 71 29.35 0.016 0.82 – 25 0.2 0.52 – 114 20.19 0.025 0.60 – 36 0.3 0.51 – 1...

Page 14 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 2 m A, VCE = 10 V, Z0 = 50 0.1 0.91 – 17 7.02 0.021 0.98 – 7 0.2 0.87 – 36 6.57 0.042 0.95 – 14 0.3 0.82 – 53 5....

Page 15 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 m A, VCE = 10 V, Z0 = 50 0.1 0.80 – 28 14.24 0.020 0.95 – 13 0.2 0.73 – 57 12.50 0.036 0.86 – 23 0.3 0.67 – 79...

Page 16 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 10 V, Z0 = 50 0.1 0.68 – 43 21.82 0.018 0.91 – 17 0.2 0.60 – 78 17.39 0.030 0.76 – 29 0.3 0.56 – 1...

Page 17 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 15 m A, VCE = 10 V, Z0 = 50 0.1 0.62 – 55 26.35 0.017 0.88 – 20 0.2 0.55 – 94 19.54 0.026 0.69 – 31 0.3 0.52 – 1...

Page 18 BFQ 71 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 20 m A, VCE = 10 V, Z0 = 50 0.1 0.57 – 63 28.86 0.015 0.84 – 21 0.2 0.52 – 106 20.30 0.024 0.65 – 30 0.3 0.50 – ...

Manual Details

Brand	Siemens
Pages	18
File Size	508.42 KB
Published	June 05, 2026

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Frequently Asked Questions

What is the operating frequency range for this transistor?

It functions for broadband amplifiers up to 2 GHz.

What are the maximum allowable power dissipation and junction temperature?

Total power dissipation (Ptot) should not exceed 300 mW, with a max junction temperature (Tj) of 175°C.

Is this transistor sensitive to electrical discharge?

Yes, it is an ESD sensitive device, requiring careful handling precautions.

How is the optimum gain measured at different frequencies and currents?

Gain can be observed across various conditions, such as Gma (at 800 MHz) up to about 14.6 dB with a 50-ohm load.