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Siemens BFQ 72 Data Sheet

Summary

The BFQ72 is a high-performance NPN Silicon RF Transistor designed for low-distortion broadband amplification up to 2 GHz. This hermetically sealed component features reliable operation across specified collector current ranges (10mA–30mA). The comprehensive manual provides detailed technical specifications, including AC and DC electrical characteristics, S-parameters, transconductance, noise figures, and power gains. It is essential reading for RF engineers and circuit designers utilizing the transistor in critical high-frequency applications requiring precise performance metrics up to 2 GHz.

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查询BFQ72供应商

NPN Silicon RF Transistor BFQ 72

For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 m A to 30 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening available. CECC-type available: CECC 50002/263.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BFQ 72 Q62702-F77672 Cerec-X

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0 Collector-emitter voltage, VBE = 0 VCES Collector-base voltage VCB0 Emitter-base voltage VEB0 2.5

Collector current IC m A

Base current IB

Total power dissipation, TS ˚C3) Ptot m W

Junction temperature Tj ˚C

Ambient temperature range TA – 65 … + 175

Storage temperature range Tstg – 65 … + 175

Thermal Resistance

Junction - ambient2) Rth JA ≤ 260 K/W Junction - soldering point3) Rth JS ≤ 180

1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

Page Summary Contents For Siemens BFQ 72 Data Sheet

Page 1 查询BFQ72供应商 NPN Silicon RF Transistor BFQ 72 For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 m A to 30 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening a...
Page 2 BFQ 72 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC = 1 m A, IB...
Page 3 BFQ 72 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. AC Characteristics f T GHz Transition frequency IC = 25 m A, VCE = 5 V, f = 200...
Page 4 BFQ 72 Total power dissipation Ptot = f (TA*; TS) Transition frequency f T = f (IC) *Package mounted on alumina VCE = 5 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz
Page 5 BFQ 72 Common Emitter Noise Parameters Fmin Gp(Fmin) Γopt RN F50 Gp(F50Ω) GHz d B d B MAG ANG d B d B IC = 2 m A, VCE = 8 V, Z0 = 50 0.01 1.0 (ZS = 150 Ω) 1.6 IC = 10 m A, VCE = 8 V, Z0 = 50 0.01 1.5 ...
Page 6 BFQ 72 Circles of constant noise figure F = f (ZS) Noise figure F = f (IC) in ZS-plane, IC = 10 m A, VCE = 8 V, Power gain G = f (IC) f = 800 MHz VCE = 8 V, f = 800 MHz, ZLopt (G)
Page 7 BFQ 72 Common Emitter Power Gain Power gain Gms, S21e 2 = f (IC) Power gain Gma, Gms, S21e 2 = f (IC) VCE = 8 V, f = 200 MHz, Z0 = 50 VCE = 8 V, f = 500 MHz, Z0 = 50 Power gain Gma, S21e 2 = f (IC)...
Page 8 BFQ 72 Power gain Gma, Gms, S21e 2 = f (f) Power gain Gma, Gms,  S21e 2 = f (f) IC = 10 m A, VCE = 8 V, Z0 = 50 IC = 25 m A, VCE = 8 V, Z0 = 50 Power gain Gma, Gms, S21e 2 = f (f) IC = 40 m A, VCE...
Page 9 BFQ 72 Common Emitter S Parameters GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 15 m A, VCE = 5 V, Z0 = 50 0.1 0.62 – 78 26.97 0.023 0.76 – 34 0.2 0.57 – 121 17.54 0.032 0.51 – 50 0.3 0.56 – 142 12.39 0.0...
Page 10 BFQ 72 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 25 m A, VCE = 5 V, Z0 = 50 0.1 0.54 – 99 31.95 0.018 0.66 – 41 0.2 0.55 – 137 19.18 0.027 0.42 – 55 0.3 0.55 – 1...
Page 11 BFQ 72 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 50 m A, VCE = 5 V, Z0 = 50 0.1 0.51 – 126 34.20 0.014 0.55 – 46 0.2 0.55 – 154 18.99 0.021 0.33 – 52 0.3 0.55 – ...
Page 12 BFQ 72 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 8 V, Z0 = 50 0.1 0.69 – 59 22.59 0.023 0.85 – 24 0.2 0.61 – 100 16.18 0.036 0.64 – 37 0.3 0.57 – 1...
Page 13 BFQ 72 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 25 m A, VCE = 8 V, Z0 = 50 0.1 0.55 – 90 32.99 0.017 0.71 – 35 0.2 0.53 – 131 20.17 0.024 0.46 – 44 0.3 0.52 – 1...
Page 14 BFQ 72 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 40 m A, VCE = 8 V, Z0 = 50 0.1 0.51 – 108 35.70 0.016 0.64 – 37 0.2 0.52 – 144 20.53 0.021 0.41 – 42 0.3 0.53 – ...