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Siemens BFQ 82 Data Handbook

Summary

A high-performance NPN Silicon RF Transistor designed for low-noise, high-gain amplification in broadband linear applications up to 2 GHz. This manual provides electronics professionals and RF engineers with comprehensive technical data, including detailed maximum ratings, AC/DC specifications, S-parameters, Noise Figure (NF), and linearity metrics (IP3). It is the essential guide for designing stable, efficient wireless communication and radar systems.

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查询BFQ82供应商

NPN Silicon RF Transistor BFQ 82

For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 m A. Hermetically sealed ceramic package. f T = 8 GHz F = 1.1 d B at 800 MHz

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BFQ 82 Q62702-F118982 Cerec-X

Maximum Ratings

Parameter Symbol Values Unit Collector-emitter voltage VCE0 Collector-emitter voltage, VBE = 0 VCES Collector-base voltage VCB0 Emitter-base voltage VEB0

Collector current IC m A

Peak collector current, MHz ICM Base current IB Peak base current, MHz IBM

Total power dissipation, TS ˚C3) Ptot m W

Junction temperature Tj ˚C

Ambient temperature range TA – 65 … + 175

Storage temperature range Tstg – 65 … + 175

Thermal Resistance

Junction - ambient2) Rth JA ≤ 240 K/W Junction - case3) Rth JS ≤ 160

1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm 16.7 mm 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.

Page Summary Contents For Siemens BFQ 82 Data Handbook

Page 1 查询BFQ82供应商 NPN Silicon RF Transistor BFQ 82 For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 m A. Hermetically sealed ceramic package. f T ...
Page 2 BFQ 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC = 1 m A, IB...
Page 3 BFQ 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. AC Characteristics f T GHz Transition frequency IC = 5 m A, VCE = 8 V, f = 500 ...
Page 4 BFQ 82 Total power dissipation Ptot = f (TA*; TS) Transition frequency f T = f (IC) * Package mounted on alumina f = 500 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz
Page 5 BFQ 82 Common Emitter Noise Parameters Fmin Gp(Fmin) Γopt RN F50 Gp(F50 Ω) GHz d B d B MAG ANG d B d B IC = 10 m A, VCE = 8 V, Z0 = 50 0.01 (ZS = 75 Ω) 1.05 IC = 30 m A, VCE = 8 V, Z0 = 50 0.01 1.65 (...
Page 6 BFQ 82 Noise figure F = f (IC) Noise figure F = f (IC) Power gain G = f (IC) Power gain G = f (IC) VCE = 8 V, f = 800 MHz, ZLopt (G) VCE = 8 V, f = 2 GHz, ZLopt (G)
Page 7 BFQ 82 Common Emitter Power Gain Power gain Gms, S21e  2 = f (IC) Power gain Gms, S21e  2 = f (IC) VCE = 8 V, f = 200 MHz, Z0 = 50 VCE = 8 V, f = 500 MHz, Z0 = 50 Power gain Gma, Gms, S21e  2 = f (...
Page 8 BFQ 82 Power gain Gma, Gms, S21e  2 = f ( f) Power gain Gma, Gms,  S21e  2 = f ( f) IC = 5 m A, VCE = 8 V, Z0 = 50 IC = 10 m A, VCE = 8 V, Z0 = 50 Power gain Gma, Gms, S21e  2 = f ( f) Power gain ...
Page 9 BFQ 82 Common Emitter S Parameters GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 3 V, Z0 = 50 0.10 0.549 – 117.0 34.54 127.9 0.020 53.4 0.627 – 55.5 0.15 0.598 – 136.2 26.39 116.1 0.023 48.5 ...
Page 10 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 m A, VCE = 5 V, Z0 = 50 0.10 0.783 – 48.9 14.66 152.0 0.033 66.4 0.904 – 21.5 0.15 0.763 – 68.9 13.27 140.7 0....
Page 11 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 5 V, Z0 = 50 0.10 0.670 – 68.9 23.03 143.5 0.028 60.6 0.822 – 32.5 0.15 0.664 – 92.4 19.59 131.0 0...
Page 12 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 30 m A, VCE = 5 V, Z0 = 50 0.10 0.545 – 111.4 35.72 129.0 0.020 54.2 0.642 – 53.6 0.15 0.584 – 132.2 27.43 117.1...
Page 13 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 50 m A, VCE = 5 V, Z0 = 50 0.10 0.541 – 128.9 38.90 123.5 0.016 53.8 0.560 – 62.3 0.15 0.587 – 145.8 28.86 112.3...
Page 14 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 5 m A, VCE = 8 V, Z0 = 50 0.10 0.792 – 47.3 14.67 152.6 0.033 66.9 0.908 – 20.9 0.15 0.771 – 67.0 13.33 141.4 0....
Page 15 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 10 m A, VCE = 8 V, Z0 = 50 0.10 0.686 – 65.8 23.05 144.4 0.028 61.2 0.829 – 31.5 0.15 0.673 – 89.1 19.74 132.0 0...
Page 16 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 30 m A, VCE = 8 V, Z0 = 50 0.10 0.559 – 105.0 36.41 130.0 0.020 54.4 0.651 – 52.3 0.15 0.585 – 127.1 28.14 117.9...
Page 17 BFQ 82 Common Emitter S Parameters (continued) GHz MAG ANG MAG ANG MAG ANG MAG ANG IC = 50 m A, VCE = 8 V, Z0 = 50 0.10 0.548 – 120.2 39.95 124.5 0.017 53.4 0.569 – 60.7 0.15 0.582 – 139.4 29.82 113.2...
Page 18 BFQ 82 Common Emitter Large Signal Parameters Linear output voltage Vo = (IC) VCE = 8 V, d IM = 60 d B, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Note: The transistor is driven by 2 adjacent signals f1...