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Siemens BFQ193 Data Handbook / Specifications

Summary

This datasheet provides comprehensive technical specifications for the BFQ 193, a high-performance NPN Silicon RF Transistor. Engineered for critical low noise and high-gain amplification applications up to 2GHz, it is ideal for developing linear broadband or microwave circuitry. The manual details maximum operating limits, key electrical characteristics (including Noise Figure and Power Gain), and performance data across various frequencies, making it an essential resource for RF engineers and circuit designers in high-frequency electronics fields.

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查询BFQ193供应商

BFQ 193

NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f T = 7.5 GHz F = 1.3 d B at 900 MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFQ 193 RCs Q62702-F1312 1 = B 2 = C 3 = E SOT-89

Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC m A Base current IB Total power dissipation Ptot m W TS ≤ 93 °C Junction temperature Tj °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance

Junction - soldering point 1) Rth JS ≤ 95 K/W

Semiconductor Group Dec-13-1996

Page Summary Contents For Siemens BFQ193 Data Handbook / Specifications

Page 1 查询BFQ193供应商 BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f T = 7.5 GHz F = 1.3 d B at 900 MHz ESD: Electrostatic discharge sen...
Page 2 BFQ 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 m A, IB ...
Page 3 BFQ 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T GHz IC = 50 m A, VCE = 8 V, f = 500...
Page 4 BFQ 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy °C TA,TS Permissible Pulse Load Rth JS = f (tp) Permissible Pulse Load Ptotmax/Ptot DC = f (tp) Rth JS Ptotmax/Ptot DC K/W...

Manual Details

Brand Siemens
Pages 4
File Size 29.81 KB
Published June 05, 2026
19 views

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Frequently Asked Questions

What is the maximum allowed total power dissipation?

The maximum continuous total power dissipation (Ptot) in a standard package setup is 500 mW.

Is the BFQ 193 sensitive to static electricity?

Yes, it is an Electrostatic discharge sensitive device and requires careful handling precautions.

What frequency range does this NPN transistor operate best in?

It provides low noise, high-gain amplification up to 2 GHz, suitable for linear broadband amplifiers.

What is the expected Noise figure (F) at 900 MHz?

The typical noise figure (F) for the BFQ 193 at 900 MHz is 1.3 dB.