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SIEMENS Silicon N-Channel MOSFET Tetrode BF 996 S Data Sheet User Manual

Summary

This comprehensive datasheet provides the full technical specifications for the BF996S Silicon N Channel MOSFET Tetrode, an advanced component designed for signal amplification in UHF TV tuner input stages. Engineers will find critical operational details covering maximum ratings, deep dive DC/AC characteristics, power gain measurements (up to 800 MHz), and reliable low noise figure performance. This resource is essential for R&D teams and circuit designers requiring precision components with high transconductance for professional RF electronics applications.

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查询BF996S供应商

Silicon N Channel MOSFET Tetrode BF 996 S

For input stages in UHF TV tuners High transconductance Low noise figure

Type Marking Ordering Code Package1)Pin Configuration (tape and reel)

BF 996 S Q62702-F1021MH G2 G1 SOT-143

Maximum Ratings

Parameter Symbol Values Unit Drain-source voltage VDS

ID m ADrain current Gate 1/gate 2 peak source current IG1/2SM

Total power dissipation, TA < 76 ˚C Ptot m W

Storage temperature range Tstg – 55 … + 150 ˚C

Channel temperature Tch

Thermal Resistance

Junction - soldering point Rth JS K/W

1) For detailed information see chapter Package Outlines.

Semiconductor Group 07.94

Page Summary Contents For SIEMENS Silicon N-Channel MOSFET Tetrode BF 996 S Data Sheet User Manual

Page 1 查询BF996S供应商 Silicon N Channel MOSFET Tetrode BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering Code Package1)Pin Configuration (tape and reel) BF ...
Page 2 BF 996 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC Characteristics V(BR) DS VDrain-source breakdown voltage ID = 10 µA, – VG1...
Page 3 BF 996 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. AC Characteristics gfs m SForward transconductance VDS = 15 V, ID = 10 m A, V...
Page 4 BF 996 S Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) VG2S = 4 Gate 1 forward transconductance Gate 1 forward transconductance gfs1 = f (VG1S) gfs1 = f (VG2S) VDS = 15 V, ...
Page 5 BF 996 S Drain current ID = f (VG1S) Gate 1 input capacitance Cg1ss = f (VG1S) VDS = 15 VG2S = 4 V, VDS = 15 IDSS = 10 m A, f = 1 MHz Gate 2 input capacitance Cg2ss = f (VG2S) Output capacitance Cdss ...
Page 6 BF 996 S Power gain Gps = f (VG2S) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 m A VDS = 15 V, VG1S = 0 V, IDSS = 10 m A f = 200 MHz (see test circuit 1) f = 200 MHz (see test circuit ...
Page 7 BF 996 S Gate 1 input admittance y11s Gate 1 forward transfer admittance y21s VDS = 15 V, VG2S = 4 VDS = 15 V, VG2S = 4 (common source) (common source) Output admittance y22s VDS = 15 V, VG2S = 4 (com...
Page 8 BF 996 S Test circuit 1 for power gain and noise figure f = 200 MHz, GG = 2 m S, GL = 0.5 m S Test circuit 2 for power gain, noise figure and cross modulation f = 800 MHz, GG = 2.5 m S, GL = 0.8 m S S...

Manual Details

Brand Siemens
Pages 8
File Size 140.23 KB
Published June 01, 2026
37 views

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Frequently Asked Questions

What is the maximum recommended channel temperature?

The channel temperature ($T_{ch}$) must not exceed 150°C.

How high must the junction-to-soldering point thermal resistance be avoided?

The thermal resistance $R_{thJS}$ should be less than 370 K/W.

What is the typical forward transconductance ($g_{fs}$) value?

At $V_{DS}=15$ V and $I_D=10$ mA, the typical transconductance is 18 mS.

What voltage range determines the gate source breakdown voltages?

Both Gate 1 and Gate 2 have a breakdown voltage ($V(BR)$) that ranges from 8.5 V to 14 V.