Vishay Si1304DL N-Channel 25-V (D-S) MOSFET Data Sheet User Manual
Summary
The Si1304DL-T1 is a high-performance N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for reliable power switching applications up to 25V. This comprehensive manual provides essential technical details required for electronics designers, including absolute maximum ratings, detailed electrical specifications such as on-state resistance ($\text{R}_{\text{DS(on)}}$), gate threshold voltage, and key capacitances. The document also features thermal analysis and operational graphs, ensuring users can properly select and integrate this power semiconductor component into complex circuit designs while managing heat dissipation under various ambient conditions.
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查询Si1304DL-T1供应商
Si1304DL Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY VDS (V) r DS(on) () ID (A) Qg (Typ)
0.350 @ VGS = 4.5 V 0.75
0.450 @ VGS = 2.5 V 0.66
SOT-323 SC-70 (3-LEADS)
Marking Code
KB XX
Lot Traceability and Date Code Part # Code
Top View
Ordering Information: Si1304DL-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS
Gate-Source Voltage VGS
TA = 25C 0.75 0.70
Continuous Drain Current (TJ = 150C)a ID
TA = 70C 0.60 0.56
Pulsed Drain Current IDM 3.0
Continuous Diode Current (Diode Conduction)a IS 0.28 0.24
TA = 25C 0.33 0.29
Maximum Power Dissipationa PD
TA = 70C 0.21 0.19
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t 5 sec
ax mum unc ti on- o- bi en ta th JA
Steady State C/W
Maximum Junction-to-Foot (Drain) Steady State Rth JF
Notes a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71315 www.vishay.com
S-41774—Rev. C, 04-Oct-04
Page Summary Contents For Vishay Si1304DL N-Channel 25-V (D-S) MOSFET Data Sheet User Manual
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 4 |
| File Size | 54.57 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What is the absolute maximum Drain-Source Voltage limit?
The maximum specified drain-source voltage (Vds) allowed is 25V.
What is the typical on-state resistance for this MOSFET?
The typical drain-source on-state resistance (rds(on)) is 0.35V at 2.5V gate-source and 0.5A current.
How do I determine the device's cooling requirement?
Maximum Junction-to-Ambient (RthJA) steady state is typically 380°C/W, and Junction-to-Foot (RthJF) is about 285°C/W.