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Vishay SPICE Device Model Si9936BDY Dual N-Channel 30-V (D-S) MOSFET Data Manual

Summary

Optimize your simulations with this professional SPICE model guide for the Si9936BDY Dual N-Channel MOSFET. Designed specifically for electronics engineers, this manual details the complex electrical characteristics—including transient response, gate charge, and on-state resistance—critical for power circuit design. It provides an accurate Level 3 MOS macro model optimized for reliable performance simulation across challenging temperatures ranging from -55°C to 125°C. Use it to ensure superior accuracy in your power electronics designs.

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查询SI9936BDY供应商 SPICE Device Model Si9936BDY Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Apply for both Linear and Switching Application

• Macro Model (Subcircuit Model) • Accurate over the −55 to 125°C Temperature Range • Level 3 MOS • Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

A novel gate-to-drain feedback capacitance network is used to

characteristics of the n-channel vertical DMOS. The subcircuit model the gate charge characteristics while avoiding convergence

model is extracted and optimized over the −55 to 125°C difficulties of the switched Cgd model. All model parameter values temperature ranges under the pulsed 0 to 10V gate drive. The are optimized to provide a best fit to the measured electrical data saturated output impedance is best fit at the gate bias near the and are not intended as an exact physical interpretation of the threshold voltage. device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 72573 www.vishay.com 02-Jun-04 1

Page Summary Contents For Vishay SPICE Device Model Si9936BDY Dual N-Channel 30-V (D-S) MOSFET Data Manual

Page 1 查询SI9936BDY供应商 SPICE Device Model Si9936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Apply for both Linear and Switching Application • Macro Model ...
Page 2 SPICE Device Model Si9936BDY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Measured Parameter Symbol Test Conditions Simulated Data Data Unit Static Gate Threshold Voltage VGS(th)...
Page 3 SPICE Device Model Si9936BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 72573 www.vishay.com 02-Jun-04 3