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ZETEX ZXMN3A04DN8 1 Dual 30V N-Channel Enhancement Mode MOSFET Data Sheet Manual User Guide

Summary

This high-performance N-Channel MOSFET utilizes advanced TRENCH technology to deliver superior switching speeds and extremely low on-resistance in compact packages. It is the optimal component for power electronics designed for high efficiency, such as DC-DC converters, motor controls, and system management. The technical manual provides comprehensive data for professional engineers, covering absolute maximum ratings, detailed electrical characteristics, thermal profiles, and packaging dimensions needed to integrate this essential switching element successfully into your next design.

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查询ZXMN3A04DN8供应商

ZXMN3A04DN8

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=7.6A

DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low profile SOIC package

APPLICATIONS DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY Top View

PER REEL

ZXMN3A04DN8TA 7” 12mm units

ZXMN3A04DN8TC 13” 12mm units

DEVICE MARKING ZXMN 3A04D

PROVISIONAL ISSUE A - AUGUST 2001

Page Summary Contents For ZETEX ZXMN3A04DN8 1 Dual 30V N-Channel Enhancement Mode MOSFET Data Sheet Manual User Guide

Page 1 查询ZXMN3A04DN8供应商 ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes unique structu...
Page 2 ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS Gate Source Voltage VGS Continuous Drain Current (VGS=10V; TA=25°C)(b)(d) ID 7.6 (VGS=10V; TA=70°C)(b)(d) 6....
Page 3 ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS ID=250µA, VGS=0V Zero Gat...
Page 4 ZXMN3A04DN8 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max 4.80 4.98 0.189 0.196 1.27 BSC 0.05 BSC 0.53 REF 0.02 REF 0.36 0.46 0.014 0.018 3.81 3.99 0.15 0.157 1.35 1.75 0.05 0.07 0.10 0.25...

Manual Details

Brand Dual
Pages 4
File Size 55.14 KB
Published June 05, 2026
19 views

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Frequently Asked Questions

What is the device primarily used for?

It is ideal for high-efficiency, low voltage power applications such as DC-DC Converters, Power Management Functions, Motor control, and Disconnect switches.

What are the key electrical specifications of this MOSFET?

It has a Drain-Source Voltage (V_DSS) limit of 30V and a remarkably low On-State Resistance (R_DS(on)) of 0.02 Ohms.

How should I handle thermal dissipation calculations?

For single active die surface mounting on a 25mm x 25mm FR4 PCB, the power dissipation at 25°C is 1.8 Watts (assuming linear derating).

What reel sizes are available for ordering this component?

You can order it in either ZXMN3A04DN8TA reels (7”, 12mm, 500 units) or ZXMN3A04DN8TC reels (13”, 12mm, 2500 units).