Fairchild FDD6682 FDU6682 30V N-Channel PowerTrenchH MOSFET Data Handbook

June 2004

FDD6682/FDU6682 30V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 75 A, 30 V RDS(ON) = 6.2 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 8.0 mΩ @ VGS = 4.5 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

• Low gate charge

low gate charge, low RDS( ON) and fast switching speed.

• Fast switching

Applications

• High performance trench technology for extremely

• DC/DC converter

low RDS(ON)

• Motor Drives

I-PAK (TO-251AA)

TO-252D-PAK (TO-252)

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 3)

– Pulsed (Note 1a)

PD Power Dissipation for Single Operation (Note 1)

(Note 1a) 3.8 (Note 1b) 1.6

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6682 FDD6682 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6682 FDU6682 I-PAK (TO-251) Tube N/A

2004 Fairchild Semiconductor Corporation FDD6682/FDU6682 Rev H(W)