ALPHA&OMEGA AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Data Manual

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Rev 3: Nov 2004

AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features

VDS (V) = 30V

The AO4916 uses advanced trench technology to ID = 8.5A provide excellent R DS(ON) and low gate charge. The

RDS(ON) < 17mΩ (VGS = 10V)

two MOSFETs make a compact and efficient switch

RDS(ON) < 27mΩ (VGS = 4.5V)

and synchronous rectifier combination for use in DC- DC converters. A Schottky diode is co-packaged in

SCHOTTKY

parallel with the synchronous MOSFET to boost

VDS (V) = 30V, IF = 3A, VF=0.5V@1A

efficiency further. AO4916L ( Green Product ) is offered in a lead-free package.

SOIC-8 S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Schottky Units

Drain-Source Voltage VDS Gate-Source Voltage VGS ±20

TA=25°C 8.5

Continuous Drain Current A TA=70°C 6.6

Pulsed Drain Current B IDM Schottky reverse voltage VKA

TA=25°C

Continuous Forward Current A TA=70°C A2

Pulsed Forward Current B IFM

TA=25°C

Power Dissipation TA=70°C 1.28 1.28

Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Parameter: Thermal Characteristics MOSFET Typ Symbol Max Units

Maximum Junction-to-Ambient A t ≤ 10s 62.5

Steady-State °C/WMaximum Junction-to-Ambient A

Maximum Junction-to-Lead C Steady-State RθJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient A t ≤ 10s 47.5 62.5

Steady-State °C/WMaximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State RθJL

Alpha & Omega Semiconductor, Ltd.