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Fairchild 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Data Handbook

Summary

This N-Channel Enhancement Mode Field Effect Transistor is a high-performance, low on-resistance component housed in an ultra-small SOT-323 surface mount package. Ideal for modern electronics requiring fast switching speed and minimized footprint, it complies with RoHS standards. The comprehensive manual provides detailed specifications, including absolute maximum ratings, full electrical characteristics (including switching times), and typical performance graphs to assist circuit designers and engineers integrating advanced power management solutions into their designs.

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2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor

May 2011

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/Ro HS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

SOT-323

Marking : 7KW

Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Maximum Drain Current - Continuous m A

TJ = 100°C m A

- Pulsed 1.2 TJ Operating Junction Temperature Range -55 to +150 °C

TSTG Storage Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation m W

Derating above TA = 25°C 2.4 m W/°C

RθJA Thermal Resistance, Junction to Ambient * °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002KW Rev. A0

Page Summary Contents For Fairchild 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Data Handbook

Page 1 2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capac...
Page 2 2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS...
Page 3 2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor . D ra in -S ou rc ur re nt (A . D ra in -S ou rc ur re nt (A ra in -S ou rc n- es is ta nc Typical Performance Characteristics Figure 1. ...
Page 4 2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor , D ra in ur re nt [A ds , N or al iz ed . C ap ac ita nc (p F) IS S, SS , C ra in ou rc re ak do ol ta ge Typical Performance Characteris...
Page 5 2N 7002K -C hannel Enhancem ent M ode Field Effect Transistor Physical Dimensions SOT-323 0.10 Min Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002KW R...
Page 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 6
File Size 286.34 KB
Published June 18, 2026
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Frequently Asked Questions

What is the operating junction temperature range for this MOSFET?

The Operating Junction Temperature Range is -55 to +150 °C.

How do I ensure I purchase genuine Fairchild components?

Purchase directly from Fairchild or from an Authorized Fairchild Distributor list available on their website.

What are the typical On-Resistance values reported in the datasheet?

At 20V (10A) and 500mA, the specified R(ON) is approximately 1.6 Ω at 25°C.

What warning must I observe when selecting parts to prevent counterfeit usage?

Avoid unauthorized sources; only purchase from Fairchild or Authorized Distributors for full warranty coverage.