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ZETEX ZXMD63P03X Dual 30V P-Channel Enhancement Mode MOSFET Data Manual

Summary

Engineered for high efficiency, this advanced MOSFET device excels in low voltage power management applications due to its combination of low on-resistance and rapid switching speed. The supporting documentation provides comprehensive technical data for designers, detailing absolute maximum ratings, electrical characteristics (including $R_{\text{DS(on)}}$), dynamic switching profiles, thermal performance curves, and package dimensions. It is the optimal component choice for building robust DC-DC converters, motor control systems, and high-performance disconnect switches.

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查询ZXMD63P03X供应商

ZXMD63P03X

DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A

DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

MSOP8

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low profile SOIC package

APPLICATIONS DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY

(inches) PER REEL

ZXMD63P03XTA 12mm embossed 1000 units

Top View

ZXMD63P03XTC 12mm embossed 4000 units

DEVICE MARKING ZXM63P03

PROVISIONAL ISSUE A - JULY 1999

Page Summary Contents For ZETEX ZXMD63P03X Dual 30V P-Channel Enhancement Mode MOSFET Data Manual

Page 1 查询ZXMD63P03X供应商 ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a uniq...
Page 2 ZXMD63P03X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 Gate- Source Voltage VGS ± 20 Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) ID -2.0 (VGS=4.5V; TA=70...
Page 3 ZXMD63P03X he rm al es is ta nc (° /W ID ra in rr en (A CHARACTERISTICS Refer Note (a) Refer Note (b) Refer Note (a) 100ms 10ms 1ms 100us VDS - Drain-Source Voltage (V) T - Temperature (°) Safe Operat...
Page 4 ZXMD63P03X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 ID=-250µA, VGS=0V Ze...
Page 5 ZXMD63P03X (o ra in -S rc -R es is ta ce -I ra in rr en (A -I ra in rr en (A TYPICAL CHARACTERISTICS 8V 6V7V -VGS10V 10V 8V 7V 6V -VGS 5V -VDS - Drain-Source Voltage (V) -VDS - Drain-Source Voltage (V...
Page 6 ZXMD63P03X ap ac ita nc (p TYPICAL CHARACTERISTICS Vgs=0V ID=-1.2A f=1Mhz VDS=-15V VDS=-24VCiss Coss Crss 0.1 -VDS - Drain Source Voltage (V) Q -Charge (n C) Capacitance v Drain-Source Voltage Gate-So...
Page 7 ZXMD63P03X PACKAGE DIMENSIONS DIM Millimetres Inches MIN MAX MIN MAX e X 6 HE 0.65 BSC 0.0256 BSC 4.90 BSC 0.193 BSC Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadd...

Manual Details

Brand Dual
Pages 7
File Size 211.31 KB
Published June 06, 2026
25 views

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Frequently Asked Questions

What material types are best suited for this MOSFET?

These high-density MOSFETs are ideal for low voltage, power management applications such as DC-DC Converters and Motor control.

What is the nominal on-state resistance (Rds(on))?

The static drain-source on-state resistance is 0.185 Ω operating at V = -10V, I = -1.2A.

What are the maximum voltage and temperature limits?

The absolute maximum ratings include a Drain-Source Voltage (VDS) limit of -30V and an operating range from -55 to +150 °C.

How do I determine the power dissipation rating?

It depends on packaging; for surface mounting on 25mm x 25mm FR4 PCB, the recommended power dissipation is 1.25 W.

What services can this MOSFET be used for?

Applications include DC-DC Converters, Power Management Functions, Disconnect switches, and Motor control.