Vishay Spice Device Model SUM110N04-2m7H Data Sheet
Summary
This highly detailed SPICE model guideline provides superior characterization for the SUM110N04-2M7H N-Channel Vertical DMOS MOSFET. Designed for electrical simulation, this subcircuit model ensures accurate performance modeling across demanding linear and switching applications. It optimizes critical parameters—such as gate charge, dynamic response, and on-state resistance—maintaining high fidelity over a wide temperature range of -55°C to 125°C. Ideal for power electronics designers and engineers requiring precision components for critical circuit simulations.
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查询SUM110N04-2M7H供应商 SPICE Device Model SUM110N04-2m7H Vishay Siliconix
N-Channel 40-V (D-S) 175°C MOSFET
CHARACTERISTICS • N-Channel Vertical DMOS
• Apply for both Linear and Switching Application
• Macro Model (Subcircuit Model) • Accurate over the −55 to 125°C Temperature Range • Level 3 MOS • Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical A novel gate-to-drain feedback capacitance network is used to characteristics of the n-channel vertical DMOS. The subcircuit model the gate charge characteristics while avoiding convergence
model is extracted and optimized over the −55 to 125°C difficulties of the switched Cgd model. All model parameter values temperature ranges under the pulsed 0 to 10V gate drive. The are optimized to provide a best fit to the measured electrical data saturated output impedance is best fit at the gate bias near the and are not intended as an exact physical interpretation of the threshold voltage. device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 72933 www.vishay.com 09-Jun-04 1
Page Summary Contents For Vishay Spice Device Model SUM110N04-2m7H Data Sheet
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 3 |
| File Size | 177.75 KB |
| Published | June 03, 2026 |
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Frequently Asked Questions
What is the nominal gate threshold voltage (Vgs(th))?
At V=5V and I=250uA, the threshold voltage is 3.7V.
What are the on-state drain current and resistance at typical operating temperatures?
The on-state drain current is 1170A, and the on-state resistance (RDS(on)) is 0.0022 Ohm.
How do I select the appropriate model for simulation?
Designers should refer to the appropriate commercial product data sheet for guaranteed specification limits and use the subcircuit model schematic provided.
What are the available capacitance values and test conditions?
Input Capacitance (Ciss) is 12450 pF, Output Capacitance (Coss) is 1429 pF, and Reverse Transfer Capacitance (Crss) is 786 pF.