# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Vishay Si7414DN Data Sheet

Summary

This ultra-low resistance N-Channel MOSFET is an ideal power component for high-efficiency switching applications, including motor drives and synchronous rectifiers. Featuring a durable PowerPAK® 1212-8 package, it offers superior thermal management and PWM optimization. The manual provides electrical engineers with comprehensive technical data, covering detailed on-state resistance specifications, total gate charge curves, single pulse testing results, and transient thermal impedance analysis required for robust power circuit design.

📄 Preview PAGE OF 4

Page 1 Text Content

查询SI7414DN供应商

Si7414DN Vishay Siliconix New Product

N-Channel 60-V (D-S) MOSFET

Trench FET Power MOSFET

VDS (V) r DS(on) () ID (A) New Low Thermal Resistance

Power PAK 1212-8 Package with Low

0.025 @ VGS = 10 V 8.7

1.07-mm Profile

0.036 @ VGS = 4.5 V 7.3

PWM Optimized

Primary Side Switch Synchronous Rectifier Motor Drives

Power PAK 1212-8

3.30 mm 3.30 mm

N-Channel MOSFET

Bottom View

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage VDS Gate-Source Voltage VGS

TA = 25C 8.7 5.6

Continuous Drain Current (TJ = 150 C)a ID

TA = 70C 7.0 4.4

Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS 3.2 1.3 Single Avalanche Current IAS

Single Avalanche Energy EAS m J

TA = 25C 3.8 1.5

Maximum Power Dissipationa PD

TA = 70C 2.0 0.8

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150

Parameter Symbol Typical Maximum Unit

t  10 sec

Maximum Junction-to-Ambienta Rth JA

Steady State C/W

Maximum Junction-to-Case (Drain) Steady State Rth JC 1.9 2.4

Notes a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71738 www.vishay.com S-04764—Rev. A, 08-Oct-01

Page Summary Contents For Vishay Si7414DN Data Sheet

Page 1 查询SI7414DN供应商 Si7414DN Vishay Siliconix New Product N-Channel 60-V (D-S) MOSFET Trench FET Power MOSFET VDS (V) r DS(on) () ID (A) New Low Thermal Resistance Power PAK 1212-8 Package with Low 0.025...
Page 2 Si7414DN Vishay Siliconix ra in ur re nt New Product Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS...
Page 3 Si7414DN ou rc ur re nt at e- to -S ou rc ol ta ge n- es is ta nc Vishay Siliconix New Product On-Resistance vs. Drain Current Capacitance VGS = 4.5 V VGS = 10 V ID – Drain Current (A) VDS – Drain-to-...
Page 4 Si7414DN or al iz ed ffe ct iv ra ns ie nt or al iz ed ffe ct iv ra ns ie nt ar ia nc (V Vishay Siliconix New Product (t h) he rm al Im pe da nc he rm al Im pe da nc Threshold Voltage Single Pulse Pow...

Manual Details

Brand Vishay
Pages 4
File Size 36.02 KB
Published June 01, 2026
26 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What type of package does the Si7414DN use?

It uses a PowerPAK® 1212-8 package.

What is the maximum drain-source voltage rating?

The continuous drain-source voltage (VDS) is rated for a maximum of 60V.

How low can the device's on-state resistance be under optimal conditions?

Under standard test conditions, the typical on-state resistance (Rds(on)) is 0.025 Ohms at Vd = 10V.

What is the maximum operating junction temperature range?

The device can operate between a minimum of -55°C and a maximum of 150°C.